MOSFET SiC Power, Single N-Channel, D2PAK-7L 900 V, 20 m , 112 A NTBG020N090SC1 Features Typ. R = 20 m V = 15 V DS(on) GS www.onsemi.com Typ. R = 16 m V = 18 V DS(on) GS Ultra Low Gate Charge (Q = 200 nC) G(tot) V R MAX I MAX (BR)DSS DS(ON) D Low Effective Output Capacitance (C = 295 pF) oss 100% Avalanche Tested 900 V 28 m 15 V 112 A RoHS Compliant Typical Applications Drain (TAB) UPS DC/DC Converter Boost Inverter Gate (Pin 1) MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit Driver Source (Pin 2) DraintoSource Voltage V 900 V DSS Power Source (Pins 3, 4, 5, 6, 7) GatetoSource Voltage V +22/8 V GS NCHANNEL MOSFET Recommended Operation Val- T < 175C V +15/5 V C GSop ues of Gate Source Voltage Continuous Drain Steady T = 25C I 112 A C D Current R (Note 2) State JC Power Dissipation P 477 W D R (Note 2) JC Continuous Drain Steady T = 25C I 9.8 A A D State Current R JA (Notes 1, 2) D2PAK7L Power Dissipation P 3.7 W D CASE 418BJ R (Notes 1, 2) JA Pulsed Drain Current (Note 3) T = 25C I 448 A A DM MARKING DIAGRAM Operating Junction and Storage Temperature T , T 55 to C J stg Range +175 AYWWZZ Source Current (Body Diode) I 148 A S NTBG 020N090SC1 Single Pulse DraintoSource Avalanche E 264 mJ AS Energy (I = 23 A , L = 1 mH) (Note 4) L pk Maximum Lead Temperature for Soldering, 1/8 T 245 C L A = Assembly Location from Case for 10 Seconds Y = Year WW = Work Week Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ZZ = Lot Traceability assumed, damage may occur and reliability may be affected. NTBG020N090SC1 = Specific Device Code 1. Surface mounted on a FR4 board using1 in2 pad of 2 oz copper. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. ORDERING INFORMATION 3. Repetitive rating, limited by max junction temperature. See detailed ordering and shipping information on page 6 of 4. E of 264 mJ is based on starting T = 25C L = 1 mH, I = 23 A, V = AS J AS DD this data sheet. 100 V, V = 15 V. GS Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: April, 2021 Rev. 2 NTBG020N090SC1/DNTBG020N090SC1 Table 1. THERMAL CHARACTERISTICS Parameter Symbol Max Units Thermal Resistance JunctiontoCase (Note 2) R 0.31 C/W JC Thermal Resistance JunctiontoAmbient (Notes 1, 2) R 41 C/W JA Table 2. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 1 mA 900 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T I = 1 mA, refer to 25C 440 mV/C (BR)DSS J D Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V T = 25C 100 A DSS GS J V = 900 V DS T = 175C 250 A J GatetoSource Leakage Current I V = +22/8 V, V = 0 V 1 A GSS GS DS ON CHARACTERISTICS Gate Threshold Voltage V V = V , I = 20 mA 1.8 2.6 4.3 V GS(TH) GS DS D Recommended Gate Voltage V 5 +15 V GOP DraintoSource On Resistance R V = 15 V, I = 60 A, T = 25C 20 28 m DS(on) GS D J V = 18 V, I = 60 A, T = 25C 16 GS D J V = 15 V, I = 60 A, T = 175C 27 GS D J Forward Transconductance g V = 20 V, I = 60 A 49 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C V = 0 V, f = 1 MHz, 4415 pF ISS GS V = 450 V DS Output Capacitance C 295 OSS Reverse Transfer Capacitance C 25 RSS Total Gate Charge Q V = 5/15 V, V = 720 V, 200 nC G(TOT) GS DS I = 60 A D Threshold Gate Charge Q 42 G(TH) GatetoSource Charge Q 76 GS GatetoDrain Charge Q 56 GD f = 1 MHz 1.5 GateResistance R G SWITCHING CHARACTERISTICS TurnOn Delay Time t V = 5/15 V, V = 720 V, 39 ns d(ON) GS DS I = 60 A, R = 2.5 , D G Rise Time t 52 r Inductive Load TurnOff Delay Time t 58 d(OFF) Fall Time t 13 f TurnOn Switching Loss E 1551 J ON TurnOff Switching Loss E 179 OFF Total Switching Loss E 1730 TOT DRAINSOURCE DIODE CHARACTERISTICS Continuous DrainSource Diode Forward I V = 5 V, T = 25C 148 A SD GS J Current Pulsed DrainSource Diode Forward Current I V = 5 V, T = 25C 448 A SDM GS J (Note 3) Forward Diode Voltage V V = 5 V, I = 30 A, T = 25C 3.7 V SD GS SD J www.onsemi.com 2