MOSFET - SiC Power, Single N-Channel, D2PAK-7L 1200 V, 20 m , 98 A NTBG020N120SC1 Features www.onsemi.com Typ. R = 20 m DS(on) Ultra Low Gate Charge (Q = 220 nC) G(tot) High Speed Switching with Low Capacitance (C = 258 pF) oss V R MAX I MAX (BR)DSS DS(ON) D 100% Avalanche Tested 1200 V 28 m 20 V 98 A T = 175C J RoHS Compliant Drain (TAB) Typical Applications UPS DC/DC Converter Gate Boost Inverter (Pin 1) MAXIMUM RATINGS (T = 25C unless otherwise noted) J Driver Source Power Source Parameter Symbol Value Unit (Pin 2) (Pin 3, 4, 5, 6, 7) DraintoSource Voltage V 1200 V DSS NCHANNEL MOSFET GatetoSource Voltage V 15/+25 V GS Recommended Operation Val- T < 175C V 5/+20 V C GSop ues of GatetoSource Voltage Continuous Drain Steady T = 25C I 98 A C D Current (Note 2) State Power Dissipation P 468 W D (Note 2) D2PAK7L CASE 418BJ Continuous Drain Steady T = 25C I 8.6 A A D Current (Notes 1, 2) State Power Dissipation P 3.7 W D MARKING DIAGRAM (Notes 1, 2) Pulsed Drain Current T = 25C I 392 A A DM AYWWZZ (Note 3) NTBG 020120SC1 Operating Junction and Storage Temperature T , T 55 to C J stg Range +175 A = Assembly Location Source Current (Body Diode) I 46 A S Y = Year Single Pulse DraintoSource Avalanche E 264 mJ AS WW = Work Week Energy (I = 23 A, L = 1 mH) (Note 4) L(pk) ZZ = Lot Traceability NTBG020120SC1 = Specific Device Code Maximum Lead Temperature for Soldering T 300 C L (1/8 from case for 5 s) Stresses exceeding those listed in the Maximum Ratings table may damage the ORDERING INFORMATION device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Device Package Shipping 1. Surface mounted on a FR4 board using1 in2 pad of 2 oz copper. 2. The entire application environment impacts the thermal resistance values shown, NTBG020N120SC1 D2PAK7L 800 ea/ they are not constants and are only valid for the particular conditions noted. Tape&Reel 3. Repetitive rating, limited by max junction temperature. 4. EAS of 264 mJ is based on starting T = 25C L = 1 mH, I = 23 A, J AS For information on tape and reel specifications, V = 120 V, V = 18 V. DD GS including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: June, 2021 Rev. 3 NTBG020N120SC1/DNTBG020N120SC1 THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Max Unit JunctiontoCase Steady State (Note 2) R 0.32 C/W JC JunctiontoAmbient Steady State (Notes 1, 2) R 41 JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 1 mA 1200 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T I = 1 mA, referenced to 25C 0.5 V/C (BR)DSS J D Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, T = 25C 100 A DSS GS J V = 1200 V DS T = 175C 1 mA J GatetoSource Leakage Current I V = +25/15 V, V = 0 V 1 A GSS GS DS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 20 mA 1.8 2.7 4.3 V GS(TH) GS DS D Recommended Gate Voltage V 5 +20 V GOP DraintoSource On Resistance R V = 20 V, I = 60 A, T = 25C 20 28 m DS(on) GS D J V = 20 V, I = 60 A, T = 175C 35 50 GS D J Forward Transconductance g V = 20 V, I = 60 A 34 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C V = 0 V, f = 1 MHz, V = 800 V 2943 pF GS DS ISS Output Capacitance C 258 OSS Reverse Transfer Capacitance C 24 RSS Total Gate Charge Q V = 5/20 V, V = 600 V, 220 nC G(TOT) GS DS I = 80 A D Threshold Gate Charge Q 33 G(TH) GatetoSource Charge Q 66 GS GatetoDrain Charge Q 63 GD GateResistance R f = 1 MHz 1.6 G SWITCHING CHARACTERISTICS TurnOn Delay Time t V = 5/20 V, 22 35 ns d(ON) GS V = 800 V, DS Rise Time t 20 32 r I = 80 A, D R = 2 TurnOff Delay Time t G 42 67 d(OFF) inductive load Fall Time t 9 18 f TurnOn Switching Loss E 461 J ON TurnOff Switching Loss E 400 OFF Total Switching Loss E 861 tot DRAINSOURCE DIODE CHARACTERISTICS V = 5 V, T = 25C A Continuous Drain Source Diode Forward I 46 SD GS J Current Pulsed DrainSource Diode Forward I 392 SDM Current (Note 3) Forward Diode Voltage V V = 5 V, I = 30 A, T = 25C 3.7 V SD GS SD J Reverse Recovery Time t V = 5/20 V, I = 80 A, 31 ns RR GS SD dI /dt = 1000 A/ s S Reverse Recovery Charge Q 228 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2