DATA SHEET www.onsemi.com MOSFET - Power, Single V R MAX I MAX (BR)DSS DS(ON) D 0.75 m 10 V N-Channel, TOLL 60 V 470 A 1.2 m 6 V 60 V, 0.75 m , 470 A NTBLS0D7N06C D Features Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G G Lowers Switching Noise/EMI These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant S Typical Applications Power Tools, Battery Operated Vacuums UAV/Drones, Material Handling BMS/Storage, Home Automation MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit HPSOF8L DraintoSource Voltage V 60 V DSS CASE 100CU GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 470 A C D Current R (Note 2) JC Steady ORDERING INFORMATION State Power Dissipation T = 25C P 314 W C D Device Package Shipping R (Note 2) JC NTBLS0D7N06C HPSOF8L 2000 / Tape & Continuous Drain T = 25C I 54 A A D (PbFree) Reel Current R JA (Notes 1, 2) Steady For information on tape and reel specifications, State including part orientation and tape sizes, please Power Dissipation T = 25C P 4.2 W A D refer to our Tape and Reel Packaging Specification R (Notes 1, 2) JA Brochure, BRD8011/D. Pulsed Drain Current T = 25C, t = 10 s I 900 A A p DM Operating Junction and Storage Temperature T , T 55 to C J stg Range +175 Source Current (Body Diode) I 260 A S Single Pulse DraintoSource Avalanche E 800 mJ AS Energy (I = 40 A) L(pk) Lead Temperature Soldering Reflow for Solder- T 260 C L ing Purposes (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit C/W JunctiontoCase Steady State (Note 2) R 0.48 JC JunctiontoAmbient Steady State (Note 2) R 36 JA 2 1. Surfacemounted on FR4 board using a 1 in pad size, 2 oz. Cu pad. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: November, 2021 Rev. 3 NTBLS0D7N06C/DNTBLS0D7N06C Table 1. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Conditions Min Typ Max Units OFF CHARACTERISTICS DraintoSource Breakdown Voltage V I = 250 A, V = 0 V 60 V (BR)DSS D GS DraintoSource Breakdown Voltage V /T 26.5 mV/C I = 661 A, ref to 25C (BR)DSS J D Temperature Coefficient Zero Gate Voltage Drain Current I V = 60 V, T = 25C 10 A DSS DS J V = 0 V GS T = 125C 100 A J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 661 A 2.0 2.8 4.0 V GS(th) GS DS D Negative Threshold Temperature Coefficient V /T I = 661 A, ref to 25C 9.8 mV/C GS(th) J D DraintoSource On Resistance R V = 10 V, I = 80 A 0.56 0.75 m DS(on) GS D DraintoSource On Resistance R V = 6 V, I = 66 A 0.85 1.20 m GS D DS(on) Forward Transconductance g V = 10 V, I = 80 A 310 S FS DS D T = 25C 0.6 GateResistance R G A CHARGES & CAPACTIANCES Input Capacitance C V = 0 V, V = 30 V, f = 10 kHz 13730 pF iss GS DS Output Capacitance C 6912 pF oss Reverse Transfer Capacitance C 92 pF rss Total Gate Charge Q V = 10 V, V = 30 V, 170 nC G(tot) GS DS I = 80 A D Threshold Gate Charge Q 39 nC G(th) GatetoSource Charge Q 62 nC gs GatetoDrain Charge Q 16 nC gd Total Gate Charge Q V = 6 V, V = 30 V, 102 nC G(tot) GS DS I = 80 A D SWITCHING CHARACTERISTICS, V = 10 V (Note 3) GS TurnOn Delay Time t V = 10 V, V = 30 V, 37 ns GS DS d(on) I = 80 A, R = 6 D G Rise Time t 57 ns r TurnOff Delay Time t 146 ns d(off) Fall Time t 105 ns f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V I = 80 A, V = 0 V T = 25C 0.79 1.2 V SD S GS J I = 80 A, V = 0 V T = 125C 0.66 V S GS J Reverse Recovery Time t 132 ns V = 0 V, dI /d = 100 A/ s, rr GS S t I = 66 A S Charge Time t 64 ns a Discharge Time t 68 ns b Reverse Recovery Charge Q 386 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Switching characteristics are independent of operating junction temperatures www.onsemi.com 2