MOSFET - Power, Single N-Channel, TOLL 80 V, 1.05 m , 351 A NTBLS1D1N08H Features www.onsemi.com Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G Lowers Switching Noise/EMI V R MAX I MAX (BR)DSS DS(ON) D These Devices are PbFree and are RoHS Compliant 80 V 1.05 m 10 V 351 A Typical Applications Power Tools, Battery Operated Vacuums UAV/Drones, Material Handling D BMS/Storage, Home Automation MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit G DraintoSource Voltage V 80 V DSS GatetoSource Voltage V 20 V GS S Continuous Drain T = 25C I 351 A C D NCHANNEL MOSFET Current R JC T = 100C 248 (Notes 1, 3) C Steady State Power Dissipation T = 25C P 311 W C D R (Note 1) JC T = 100C 156 C Continuous Drain T = 25C I 41 A A D Current R JA T = 100C 29 (Notes 1, 2, 3) A Steady State Power Dissipation T = 25C P 4.2 W A D TOLL R (Notes 1, 2) JA T = 100C 2.1 A CASE 100CU Pulsed Drain Current I 900 A T = 25C, t = 10 s A p DM Operating Junction and Storage Temperature T , T 55 to C J stg MARKING DIAGRAM Range +175 Source Current (Body Diode) I 259 A S AYWWZZ Single Pulse DraintoSource Avalanche E 1580 mJ AS Energy (I = 31.9 A) NTBLS L(pk) 1D1N08H Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) NTBLS1D1N08H = Specific Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be A = Assembly Location assumed, damage may occur and reliability may be affected. Y = Year WW = Work Week THERMAL RESISTANCE MAXIMUM RATINGS ZZ = Lot Traceability Parameter Symbol Value Unit JunctiontoCase Steady State R 0.48 C/W JC ORDERING INFORMATION JunctiontoAmbient Steady State (Note 2) R 35.8 JA See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: January, 2021 Rev. 1 NTBLS1D1N08H/DNTBLS1D1N08H ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 80 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 57 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 10 DSS GS J V = 80 V A DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 650 A 2.0 2.9 4.0 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 7.7 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 50 A 0.92 1.05 m DS(on) GS D Forward Transconductance g V =5 V, I = 50 A 213 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 11200 ISS Output Capacitance C 1600 V = 0 V, f = 1 MHz, V = 40 V pF OSS GS DS Reverse Transfer Capacitance C 49 RSS Total Gate Charge Q 166 G(TOT) Threshold Gate Charge Q 29 G(TH) nC GatetoSource Charge Q 44 V = 10 V, V = 64 V I = 50 A GS GS DS D GatetoDrain Charge Q 35 GD Plateau Voltage V 4 V GP SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 45 d(ON) Rise Time t 43 r V = 10 V, V = 64 V, GS DS ns I = 50 A, R = 6 D G TurnOff Delay Time t 141 d(OFF) Fall Time t 43 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.76 1.2 SD J V = 0 V, GS V I = 50 A S T = 125C 0.6 J Reverse Recovery Time t 92 ns RR V = 0 V, dIS/dt = 100 A/ s, GS I = 50 A S Reverse Recovery Charge Q 234 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2