MOSFET - Power, Single N-Channel, TOLL NTBLS1D5N08MC 80 V, 1.53 m , 298 A Features www.onsemi.com Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G Lowers Switching Noise/EMI V R MAX I MAX (BR)DSS DS(ON) D These Devices are PbFree, Halogen Free/BFR Free and are RoHS 1.53 m 10 V Compliant 80 V 298 A 3.7 m 6 V Applications Power Tools, Battery Operated Vacuums D UAV/Drones, Material Handling BMS/Storage, Home Automation MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit G DraintoSource Voltage V 80 V DSS GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 298 A C D S Current R (Note 2) JC Steady State Power Dissipation T = 25C P 250 W C D R (Note 2) JC Continuous Drain T = 25C I 32 A A D Current R JA (Notes 1, 2) Steady State Power Dissipation T = 25C P 2.9 W A D MO299A R (Notes 1, 2) JA TOLL CASE 100CU Pulsed Drain Current T = 25C, t = 10 s I 4487 A A p DM Operating Junction and Storage Temperature T , T 55 to C J stg Range +150 MARKING DIAGRAM Source Current (Body Diode) I 192 A S Single Pulse DraintoSource Avalanche E 1441 mJ AS Energy (I = 31 A, L = 3 mH) L(pk) AYWWZZ Lead Temperature Soldering Reflow for Solder- T 260 C L NTBLS ing Purposes (1/8 from case for 10 s) 1D5N08MC Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS NTBLS1D5N08MC = Specific Device Code A = Assembly Location Parameter Symbol Value Unit Y = Year WW = Work Week JunctiontoCase Steady State (Note 2) R 0.5 C/W JC ZZ = Lot Traceability JunctiontoAmbient Steady State (Note 2) R 43 JA 2 1. Surfacemounted on FR4 board using a 1 in pad size, 1 oz. Cu pad. 2. The entire application environment impacts the thermal resistance values shown, ORDERING INFORMATION they are not constants and are only valid for the particular conditions noted. See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: September, 2019 Rev. 0 NTBLS1D5N08MC/DNTBLS1D5N08MC Table 1. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Conditions Min Typ Max Units OFF CHARACTERISTICS DraintoSource Breakdown Voltage V I = 250 A, V = 0 V 80 V (BR)DSS D GS DraintoSource Breakdown Voltage V /T 78 mV/C I = 250 A, ref to 25C (BR)DSS J D Temperature Coefficient Zero Gate Voltage Drain Current I V = 80 V, T = 25C 1 A DSS DS J V = 0 V GS T = 125C 100 A J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 710 A 2.0 3.0 4.0 V GS(th) GS DS D Negative Threshold Temperature Coefficient V /T I = 710 A, ref to 25C 8.3 mV/C GS(th) J D DraintoSource On Resistance R V = 10 V, I = 80 A 1.30 1.53 m DS(on) GS D DraintoSource On Resistance R V = 6 V, I = 63 A 2.0 3.7 m GS D DS(on) Forward Transconductance g V = 5 V, I = 80 A 220 S FS DS D T = 25C 0.7 GateResistance R G A CHARGES & CAPACTIANCES Input Capacitance C V = 0 V, V = 40 V, f = 1 MHz 8170 pF iss GS DS Output Capacitance C 3025 pF oss Reverse Transfer Capacitance C 82 pF rss Total Gate Charge Q V = 10 V, V = 40 V, 111 nC G(tot) GS DS I = 80 A D Threshold Gate Charge Q 22 G(th) GatetoSource Charge Q 35 gs GatetoDrain Charge Q 23 gd Output Charge Q 166 oss Sync Charge Q 94 sync Plateau Voltage V 5 V P SWITCHING CHARACTERISTICS, V = 10 V (Note 3) GS TurnOn Delay Time t V = 10 V, V = 40 V, 38 ns d(on) GS DS I = 80 A, R = 6 D G Rise Time t 34 ns r TurnOff Delay Time t 74 ns d(off) Fall Time t 37 ns f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V I = 80 A, V = 0 V T = 25C 0.8 1.3 V SD S GS J I = 80 A, V = 0 V T = 125C 0.7 V S GS J Reverse Recovery Time t 19 nS rr I = 40 A, di/dt = 300 A/ s F Reverse Recovery Charge Q 42 nC rr Reverse Recovery Time t 17 nS I = 40 A, di/dt = 1000 A/ s rr F Reverse Recovery Charge Q 121 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Switching characteristics are independent of operating junction temperatures www.onsemi.com 2