MOSFET Single N-Channel 150 V, 4.4 m , 187 A NTBLS4D0N15MC Features Low R to Minimize Conduction Losses DS(on) www.onsemi.com Low Q and Capacitance to Minimize Driver Losses G Lowers Switching Noise/EMI These Devices are PbFree, Halogen Free/BFR Free and are RoHS V R MAX I MAX (BR)DSS DS(ON) D Compliant 150 V 4.4 m 10 V 187 A Typical Applications 4.9 m 8 V Power Tools, Battery Operated Vacuums UAV/Drones, Material Handling D BMS/Storage, Home Automation MAXIMUM RATINGS (T = 25C unless otherwise noted) J G Symbol Parameter Value Unit V DraintoSource Voltage 150 V DSS S V GatetoSource Voltage 20 V GS NCHANNEL MOSFET I Continuous Drain Steady T = 25C 187 A D C Current R (Note 2) State JC P Power Dissipation 316 W D R (Note 2) JC I Continuous Drain Steady T = 25C 19 A D A Current R State JA (Notes 1, 2) Top Bottom P Power Dissipation 3.4 W D R (Notes 1, 2) HPSOF8L 11.68x9.80 JA MO299A I Pulsed Drain Current T = 25C, t = 10 s 2255 A DM A p CASE 100CU T , T Operating Junction and Storage Temperature 55 to C J stg MARKING DIAGRAM Range 175 I Source Current (Body Diode) 263 A S E Single Pulse DraintoSource Avalanche 332 mJ &Z&3&K AS Energy (I = 81.5 A , L = 0.1 mH) L pk 4D0N 15MC T Lead Temperature Soldering Reflow for 260 C L Soldering Purposes (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the &Z = Assembly Plant Code device. If any of these limits are exceeded, device functionality should not be &3 = Numeric Date Code assumed, damage may occur and reliability may be affected. &K = Lot Code 2 1. Surfacemounted on FR4 board using 1 in pad size, 1 oz Cu pad. 4D0N15MC = Specific Device Code 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. ORDERING INFORMATION Device Package Shipping NTBLS4D0N15MC MO299A 2000 / Tape (PbFree) & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: April, 2020 Rev. 3 NTBLS4D0N15MC/DNTBLS4D0N15MC THERMAL RESISTANCE RATINGS Symbol Parameter Max Unit R JunctiontoCase Steady State (Note 2) 0.5 C/W JC R JunctiontoAmbient Steady State (Note 2) 43 JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS V DraintoSource Breakdown Voltage 150 V V = 0 V, I = 250 A (BR)DSS GS D V / T DraintoSource Breakdown Voltage I = 250 A, ref to 25C 30.23 mV/C (BR)DSS J D Temperature Coefficient I Zero Gate Voltage Drain Current V = 0 V, T = 25C 1 A DSS GS J V = 120 V DS T = 125C 10 A J I GatetoSource Leakage Current V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS V Gate Threshold Voltage V = V , I = 584 A 2.5 3.7 4.5 GS(TH) GS DS D V V / T Negative Threshold Temperature Coefficient 10.12 mV/C I = 250 A, ref to 25C GS(TH) J D R DraintoSource On Resistance 3.1 4.4 m DS(on) V = 10 V, I = 80 A GS D V = 8 V, I = 53 A 3.5 4.9 GS D g Forward Transconductance V = 5 V, I = 80 A 174 S FS DS D R GateResistance T = 25C 1.3 G A CHARGES & CAPACITANCES C Input Capacitance V = 0 V, f = 1 MHz, 7490 pF ISS GS V = 75 V DS C Output Capacitance 2055 OSS C Reverse Transfer Capacitance 27.2 RSS Q Total Gate Charge V = 10 V, V = 75 V, 90.4 nC G(TOT) GS DS I = 80 A D Q Threshold Gate Charge 24.7 G(TH) Q GatetoSource Charge 40.2 GS Q GatetoDrain Charge 12.6 GD V Plateau Voltage 5.7 V GP Q Output Charge V = 0 V, V = 75 V 251 nC OSS GS DS SWITCHING CHARACTERISTICS, V = 10 V (Note 3) GS t TurnOn Delay Time V = 10 V, V =75 V, 47 ns d(ON) GS DS I = 80 A, R = 6 D G t Rise Time 115 r t TurnOff Delay Time 58 d(OFF) t Fall Time 11 f DRAINSOURCE DIODE CHARACTERISTICS V Forward Diode Voltage V = 0 V, T = 25C 0.86 1.2 V SD GS J I = 80 A S T = 125C 0.75 J www.onsemi.com 2