MOSFET Power, N-Channel, SUPERFET III, FRFET 650 V, 75 A, 27.4 m NTH4L027N65S3F Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductors brand new high voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate V R MAX I MAX DSS DS(ON) D charge performance. This advanced technology is tailored to minimize 650 V 27.4 m 10 V 75 A conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the D various power system for miniaturization and higher efficiency. SUPERFET III FRFET MOSFETs optimized reverse recovery performance of body diode can remove additional component and improve system reliability. G S1: Driver Source Features S2: Power Source S1 S2 700 V T = 150C J Typ. R = 23 m DS(on) POWER MOSFET Ultra Low Gate Charge (Typ. Q = 259 nC) g Low Effective Output Capacitance (Typ. C = 1972 pF) oss(eff.) 100% Avalanche Tested These Devices are PbFree and are RoHS Compliant Applications D Telecom / Server Power Supplies S2 S1 G Industrial Power Supplies TO2474LD EV Charger CASE 340CJ UPS / Solar MARKING DIAGRAM Y&Z&3&K NTH4L027 N65S3F Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot NTH4L027N65S3F = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: November, 2019 Rev. 2 NTH4L027N65S3F/DNTH4L027N65S3F ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise noted) C Symbol Parameter Value Unit V Drain to Source Voltage 650 V DSS V Gate to Source Voltage DC 30 V GSS AC (f > 1 Hz) 30 I Drain Current Continuous (T = 25C) 75 A D C Continuous (T = 100C) 60 C I Drain Current Pulsed (Note 1) 187.5 A DM E Single Pulsed Avalanche Energy (Note 2) 1610 mJ AS I Avalanche Current (Note 2) 15 A AS E Repetitive Avalanche Energy (Note 1) 5.95 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 P Power Dissipation (T = 25C) 595 W D C Derate Above 25C 4.76 W/C T , T Operating and Storage Temperature Range 55 to +150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulsewidth limited by maximum junction temperature. 2. I = 15 A, R = 25 , starting T = 25C. AS G J 3. I 37.5 A, di/dt 200 A/ s, V 400 V, starting T = 25C. SD DD J THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max. 0.21 C/W JC R Thermal Resistance, Junction to Ambient, Max. 40 JA PACKAGE MARKING AND ORDERING INFORMATION Packing Part Number Top Marking Package Method Reel Size Tape Width Quantity NTH4L027N65S3F NTH4L027N65S3F TO2474LD Tube N/A N/A 30 Units www.onsemi.com 2