X-On Electronics has gained recognition as a prominent supplier of NTH4L040N120M3S SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTH4L040N120M3S SiC MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

NTH4L040N120M3S ON Semiconductor

Name: NTH4L040N120M3S
Brand: ON Semiconductor
SKU: NTH4L040N120M3S_ON Semiconductor
Availability: InStock
Rating: 5 (11 reviews)

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NTH4L040N120M3S electronic component of ON Semiconductor

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Part No.	NTH4L040N120M3S
Manufacturer:	ON Semiconductor
Category:	SiC MOSFETs
Description:	SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M3S, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M3S, TO-247-4L
Datasheet:	NTH4L040N120M3S Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 9.1548 ea
Line Total: USD 9.15

Availability - 388
Ship by Fri. 03 Jan to Wed. 08 Jan

MOQ: 1 Multiples: 1
Pack Size: 1

NTH4L040N120M3S More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

684692

Ship by Fri. 03 Jan to Wed. 08 Jan

MOQ : 9
Multiples : 1

9 : USD 13.4435

388

Ship by Fri. 03 Jan to Wed. 08 Jan

MOQ : 1
Multiples : 1

1 : USD 9.1548
10 : USD 8.0397
30 : USD 7.3578
90 : USD 6.7889

1383

Ship by Wed. 25 Dec to Fri. 27 Dec

MOQ : 1
Multiples : 1

1 : USD 13.0259
10 : USD 12.7916
30 : USD 9.149
120 : USD 8.968
510 : USD 8.9573
1020 : USD 8.6804

We are delighted to provide the NTH4L040N120M3S from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTH4L040N120M3S and other electronic components in the SiC MOSFETs category and beyond.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Aptina / ON Semiconductor may also be referenced as

FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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NTH4L040N120M3S ON Semiconductor

NTH4L040N120M3S More Buying Options & Price Grid(s)

Specifications

NTH4L040N120M3S Alternative Parts

HS Compliance

Aptina / ON Semiconductor may also be referenced as

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Availability	Price	Buy Price	Quantity
684692 Ship by Fri. 03 Jan to Wed. 08 Jan MOQ : 9 Multiples : 1	9 : USD 13.4435

388 Ship by Fri. 03 Jan to Wed. 08 Jan MOQ : 1 Multiples : 1	1 : USD 9.1548 10 : USD 8.0397 30 : USD 7.3578 90 : USD 6.7889

1383 Ship by Wed. 25 Dec to Fri. 27 Dec MOQ : 1 Multiples : 1	1 : USD 13.0259 10 : USD 12.7916 30 : USD 9.149 120 : USD 8.968 510 : USD 8.9573 1020 : USD 8.6804

Manufacturer ON Semiconductor ON Semiconductor
Product Category SiC MOSFETs SiC MOSFETs
Mounting Style Through Hole Through Hole
Transistor Polarity N - Channel N - Channel
Number of Channels 1 Channel 1 Channel
Vds - Drain-Source Breakdown Voltage 1.2 kV 1.2 kV
Id - Continuous Drain Current 51 A 51 A
Rds On - Drain-Source Resistance 52 mOhms 52 mOhms
Vgs - Gate-Source Voltage - 10 V , + 22 V - 10 V , + 22 V
Vgs th - Gate-Source Threshold Voltage 4.4 V 4.4 V
Qg - Gate Charge 70 nC 70 nC
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 175 C + 175 C
Pd - Power Dissipation 329 W 329 W
Channel Mode Enhancement Enhancement
Tradename EliteSiC EliteSiC
Package / Case TO - 247 - 4 TO - 247 - 4