ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 33 m , 55 A NTH4L045N065SC1 Features www.onsemi.com Typ. R = 33 m V = 18 V DS(on) GS Typ. R = 45 m V = 15 V DS(on) GS Ultra Low Gate Charge (Q = 105 nC) G(tot) V R MAX I MAX (BR)DSS DS(ON) D High Speed Switching with Low Capacitance (C = 162 pF) oss 650 V 50 m 18 V 55 A 100% Avalanche Tested T = 175C J D This Device is PbFree and is RoHS Compliant Typical Applications SMPS (Switching Mode Power Supplies) G Solar Inverters S1: Driver Source UPS (Uninterruptable Powere Supplies) S2: Power Source S1 S2 Energy Storages NCHANNEL MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit DraintoSource Voltage V 650 V DSS GatetoSource Voltage V 8/+22 V GS Recommended Operation Values V 5/+18 V GSop T < 175C C of GatetoSource Voltage D S2 S1 Continuous Drain I 55 A D G Current (Note 1) Steady TO2474L T = 25C C State CASE 340CJ Power Dissipation P 187 W D (Note 1) MARKING DIAGRAM Continuous Drain I 39 A D Current (Note 1) Steady T = 100C C State Power Dissipation P 94 W D (Note 1) Pulsed Drain Current I 197 A H4L045 DM T = 25C C (Note 2) 065SC1 AYWWZZ Operating Junction and Storage Temperature T , T 55 to C J stg Range +175 Source Current (Body Diode) I 45 A S Single Pulse DraintoSource Avalanche E 72 mJ AS H4L045065SC1 = Specific Device Code Energy (I = 12 A, L = 1 mH) (Note 3) L(pk) A = Assembly Location Maximum Lead Temperature for Soldering T 300 C L Y = Year (1/8 from case for 5 s) WW = Work Week Stresses exceeding those listed in the Maximum Ratings table may damage the ZZ = Lot Traceability device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. Device Package Shipping 2. Repetitive rating, limited by max junction temperature. 3. EAS of 72 mJ is based on starting T = 25C L = 1 mH, I = 12 A, NTH4L045N065SC1 TO2474L 30 Units / J AS V = 50 V, V = 18 V. Tube DD GS Semiconductor Components Industries, LLC, 2021 1 Publication Order Number: May, 2021 Rev. 1 NTH4L045N065SC1/D