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All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. MOSFET - SiC Power, Single N-Channel 900 V, 60 m , 46 A NTH4L060N090SC1 Features Typ. R = 60 m V = 15 V DS(on) GS Typ. R = 43 m V = 18 V DS(on) GS www.onsemi.com Ultra Low Gate Charge (typ. Q = 87 nC) G(tot) Low Effective Output Capacitance (typ. C = 113 pF) oss 100% UIL Tested V R MAX I MAX (BR)DSS DS(on) D These Devices are RoHS Compliant 900 V 84 m 15 V 46 A Typical Applications UPS DC/DC Converter D Boost Inverter MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit G DraintoSource Voltage V 900 V DSS S1: Kelvin Source GatetoSource Voltage V +22/8 V S2: Power Source GS S2 S1 Recommended Opera- V 5/+15 V GSop tion Values of Gateto T < 175C C NCHANNEL MOSFET Source Voltage Continuous Drain I 46 A D Current R Steady JC T = 25C C State Power Dissipation R P 221 W JC D Continuous Drain I 32 A D Current R Steady JC T = 100C C D State S2 P 110 W Power Dissipation R JC D S1 G Pulsed Drain Current I 211 A DM TO2474L T = 25C A (Note 2) CASE 340CJ Operating Junction and Storage Temperature T , T 55 to C J stg Range +175 MARKING DIAGRAM Source Current (Body Diode) I 22 A S Single Pulse DraintoSource Avalanche E 162 mJ AS Energy (I = 18 A, L = 1 mH) (Note 3) L(pk) Stresses exceeding those listed in the Maximum Ratings table may damage the H4L060 device. If any of these limits are exceeded, device functionality should not be 090SC1 assumed, damage may occur and reliability may be affected. AYWWZZ THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Note 1) R 0.68 C/W JC JunctiontoAmbient (Note 1) R 40 C/W JA H4L060090SC1 = Specific Device Code 1. The entire application environment impacts the thermal resistance values shown, A = Assembly Site they are not constants and are only valid for the particular conditions noted. Y = Year of Production 2. Repetitive rating, limited by max junction temperature. WW =Work Week Number 3. E of 162 mJ is based on starting T = 25C L = 1 mH, I = 18 A, V = AS J AS DD ZZ = Assembly Lot Number 100 V, V = 15 V. GS ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2020 1 Publication Order Number: March, 2021 Rev. 0 NTH4L060N090SC1/D