DATA SHEET www.onsemi.com MOSFET - Power, V R MAX I MAX DSS DS(ON) D N-Channel, SUPERFET III, 650 V 40 m 10 V 62 A FAST D 650 V, 40 m , 62 A NTH4LN040N65S3H G Description S1: Driver Source S2: Power Source SUPERFET III MOSFET is onsemis brandnew high voltage S1 S2 superjunction (SJ) MOSFET family that is utilizing charge balance POWER MOSFET technology for outstanding low onresistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET FAST series is very suitable for the various power systems for miniaturization and higher efficiency. D S2 S1 G Features TO2474LD 700 V T = 150C J CASE 340CW Typ. R = 32 m DS(on) Ultra Low Gate Charge (Typ. Q = 132 nC) g MARKING DIAGRAM Low Effective Output Capacitance (Typ. C = 1267 pF) oss(eff.) 100% Avalanche Tested These Devices are PbFree and are RoHS Compliant AYWWZZ T040N Applications 65S3H Telecom / Server Power Supplies Industrial Power Supplies UPS / Solar A = Assembly Site Code YWW = Data Code (Year & Week) ZZ = Assembly Lot Code T040N65S3H = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2020 1 Publication Order Number: August, 2021 Rev. 2 NTH4LN040N65S3H/DNTH4LN040N65S3H ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise noted) C Symbol Parameter Value Unit V Drain to Source Voltage 650 V DSS V Gate to Source Voltage DC 30 V GSS AC (f > 1 Hz) 30 I Drain Current Continuous (T = 25C) 62 A D C Continuous (T = 100C) 39 C I Drain Current Pulsed (Note 1) 174 A DM E Single Pulsed Avalanche Energy (Note 2) 675 mJ AS I Avalanche Current (Note 2) 8.2 A AS E Repetitive Avalanche Energy (Note 1) 3.79 mJ AR dv/dt MOSFET dv/dt 120 V/ns Peak Diode Recovery dv/dt (Note 3) 20 P Power Dissipation (T = 25C) 379 W D C Derate Above 25C 3.03 W/C T , T Operating and Storage Temperature Range 55 to +150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 seconds 260 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse width limited by maximum junction temperature. 2. I = 8.2 A, R = 25 , starting T = 25C. AS G J 3. I 31 A, di/dt 200 A/ s, V 400 V, starting T = 25C. SD DD J THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max. 0.33 C/W JC R Thermal Resistance, Junction to Ambient, Max. 40 JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity NTH4LN040N65S3H T040N65S3H TO247 L4 Tube N/A N/A 30 Units Narrow Lead www.onsemi.com 2