MOSFET - SiC Power, Single N-Channel 900 V, 60 m , 46 A NTHL060N090SC1 Features Typ. R = 60 m V = 15 V DS(on) GS www.onsemi.com Typ. R = 43 m V = 18 V DS(on) GS Ultra Low Gate Charge (typ. Q = 87 nC) G(tot) Low Effective Output Capacitance (typ. C = 113 pF) oss V R MAX I MAX (BR)DSS DS(on) D 100% UIL Tested 900 V 84 m 15 V 46 A These Devices are RoHS Compliant Typical Applications NCHANNEL MOSFET UPS D DC/DC Converter Boost Inverter MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit G DraintoSource Voltage V 900 V DSS GatetoSource Voltage V +22/8 V GS S Recommended Opera- V +15/5 V GSop tion Values of Gateto T < 175C C Source Voltage Continuous Drain I 46 A D Current R Steady JC T = 25C C State Power Dissipation R P 221 W JC D G D Continuous Drain I 32 A D S Current R Steady JC TO2473LD T = 100C C State CASE 340CX Power Dissipation R P 110 W JC D Pulsed Drain Current I 184 A DM T = 25C A (Note 2) MARKING DIAGRAM Operating Junction and Storage Temperature T , T 55 to C J stg Range +175 Source Current (Body Diode) I 22 A S Single Pulse DraintoSource Avalanche E 162 mJ Y&Z&3&K AS Energy (I = 18 A, L = 1 mH) (Note 3) L(pk) NTHL060 N090SC1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Y = ON Semiconductor Logo JunctiontoCase (Note 1) R 0.68 C/W &Z = Assembly Plant Code JC &3 = Data Code (Year & Week) JunctiontoAmbient (Note 1) R 40 C/W JA &K = Lot 1. The entire application environment impacts the thermal resistance values shown, NTHL060N090SC1 = Specific Device Code they are not constants and are only valid for the particular conditions noted. 2. Repetitive rating, limited by max junction temperature. 3. E of 162 mJ is based on starting T = 25C L = 1 mH, I = 18 A, V = AS J AS DD ORDERING INFORMATION 100 V, V = 15 V. GS See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: April, 2021 Rev. 3 NTHL060N090SC1/DNTHL060N090SC1 ELECTRICAL CHARACTERISTICS Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V =0V, I = 1 mA 900 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 574 mV/ C (BR)DSS J I = 1 mA, referenced to 25 C D Temperature Coefficient Zero Gate Voltage Drain Current I 100 A V =0V, V = 900 V, T =25 C DSS GS DS J V =0V, V = 900 V, T = 175 C 250 GS DS J GatetoSource Leakage Current I V = +22/8V, V =0V 1 A GSS GS DS ON CHARACTERISTICS Gate Threshold Voltage V V =V , I = 5 mA 1.8 2.7 4.3 V GS(th) GS DS D Recommended Gate Voltage V 5 +15 V GOP DraintoSource On Resistance R V =15V, I = 20 A, T =25 C 60 84 m DS(on) GS D J 43 V =18V, I = 20 A, T =25 C GS D J V =15V, I = 20 A, T = 175 C 76 135 GS D J Forward Transconductance g V =20V, I =20A 17 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE pF Input Capacitance C 1770 ISS Output Capacitance C V = 0 V, f = 1 MHz, V = 450 V 113 OSS GS DS Reverse Transfer Capacitance C 11 RSS nC Total Gate Charge Q 87 G(tot) Threshold Gate Charge Q 17 G(th) V = 5/15 V, V = 720 V, I =10A GS DS D GatetoSource Charge Q 27 GS GatetoDrain Charge Q 26 GD Gate Resistance R f = 1 MHz 3.0 G SWITCHING CHARACTERISTICS ns Turn-On Delay Time t 22 40 d(on) Rise Time t 33 66 r TurnOff Delay Time t 31 74 d(off) V = 5/15 V, V = 720 V, GS DS Fall Time t 11 20 I = 20 A, R = 2.5 , f D G Inductive Load J Turn-On Switching Loss E 464 ON Turn-Off Switching Loss E 23 OFF Total Switching Loss E 487 TOT DRAINSOURCE DIODE CHARACTERISTICS Continuous DraintoSource Diode I 22 A SD V = 5V, T =25 C GS J Forward Current Pulsed DraintoSource Diode For- I 184 A SDM V = 5V, T =25 C GS J ward Current (Note 2) Forward Diode Voltage V V = 5V, I = 10 A, T =25 C 3.9 V SD GS SD J Reverse Recovery Time t 18 ns RR Reverse Recovery Charge Q 84 nC RR Reverse Recovery Energy E 1.0 J REC V = 5/15 V, I =30A, GS SD dI /dt = 1000 A/ s, V = 720 V Peak Reverse Recovery Current I S DS 9.0 A RRM Charge Time t 10 ns a Discharge Time t 8.0 ns b Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2