MOSFET - Power, Single N-Channel, WDFN6 20 V NTLJS3D0N02P8Z Features www.onsemi.com 2 Small Footprint (4 mm ) for Compact Design UltraLow R to Minimize Conduction Losses DS(on) These Devices are PbFree, HalogenFree/BFRFree and are RoHS V R MAX I MAX Compliant (BR)DSS DS(on) D 3.8 m 4.5 V Applications 20 V 5.5 m 2.5 V 20.2 A Wireless Charging 14.2 m 1.8 V Power Load Switch Power Management and Protection Battery Management ELECTRICAL CONNECTION DCDC Converters D MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit DraintoSource Voltage V 20 V G DSS GatetoSource Voltage V 12 V GS S Continuous Drain Cur- Steady T = 25C I 20.2 A A D rent R (Notes 1, 3) State JA NCHANNEL MOSFET T = 85C 14.6 A Power Dissipation T = 25C P 2.40 W A D R (Notes 1, 3) JA MARKING DIAGRAM Continuous Drain Cur- Steady T = 25C I 12.1 A A D rent R (Notes 2, 3) State JA T = 85C 8.7 A YWZZ D3D0 Power Dissipation T = 25C P 0.86 W A D WDFN6 (2.05x2.05) R (Notes 2, 3) JA CASE 483AV Pulsed Drain Current T = 25C, t = 10 s I 81 A DM A p YW = Date Code Operating Junction and Storage Temperature T , T 55 to C J stg ZZ = Assembly Lot Code Range +150 D3D0 = Specific Device Code Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the ORDERING INFORMATION device. If any of these limits are exceeded, device functionality should not be See detailed ordering, marking and shipping information in the assumed, damage may occur and reliability may be affected. package dimensions section on page 4 of this data sheet. THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Parameter Symbol Value Unit JunctiontoAmbient Steady State (Note 1) 52 C/W R JA JunctiontoAmbient Steady State (Note 2) R 145 JA 2 1. Surfacemounted on FR4 board using 1 in pad size, 2 oz. Cu pad. 2. Surfacemounted on FR4 board using minimum pad size, 2 oz. Cu pad. 3. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. Actual continuous current will be limited by thermal & electromechanical application board design. R is determined by the users board design. CA Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: January, 2020 Rev. 2 NTLJS3D0N02P8Z/DNTLJS3D0N02P8Z ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 20 V (BR)DSS GS D DraintoSource Breakdown V / 16.1 mV/C (BR)DSS I = 250 A, ref to 25C D Voltage Temperature Coefficient T J Zero Gate Voltage Drain Current I T = 25C 1 A DSS J V = 0 V, GS V = 16 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 12 V 10 A GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 0.6 1.2 V GS(TH) GS DS D Threshold Temperature Coefficient V /T I = 250 A, ref to 25C 3.97 mV/C GS J D DraintoSource On Resistance R V = 4.5 V, I = 10 A 3.1 3.8 m DS(on) GS D V = 2.5 V, I = 10 A 4.5 5.5 GS D V = 1.8 V, I = 5 A 10 14.2 GS D Forward Transconductance g V = 5 V, I = 10 A 80 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 2165 pF iss V = 0 V, V = 10 V, GS DS Output Capacitance C 417 oss f = 1.0 MHz Reverse Transfer Capacitance C 396 rss Total Gate Charge Q 21 nC G(TOT) Threshold Gate Charge Q 1.6 nC G(TH) V = 4.5 V, V = 10 V, GS DS I = 10 A D GatetoSource Charge Q 3.2 GS GatetoDrain Charge Q 7.0 GD SWITCHING CHARACTERISTICS, V = 4.5 V (Note 5) GS TurnOn Delay Time t 14 ns d(on) Rise Time t 22 r V = 4.5 V, V = 15 V, GS DD I = 10 A, R = 6 D G TurnOff Delay Time t 54 d(off) Fall Time t 46 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.74 1.2 V SD J V = 0 V, GS I = 10 A S T = 125C 0.6 J Reverse Recovery Time t 23 ns RR V = 0 V, dl /dt = 100 A/ s, GS S I = 10 A S Reverse Recovery Charge Q 6.9 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2