MOSFET - Power, Dual N- & P-Channel, SO8 100 V, 83 m , 4.5 A, -100 V, 131 m , -3.6 A NTMC083NP10M5L Features www.onsemi.com Small Footprint (5 x 6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) V R MAX I MAX Low Q and Capacitance to Minimize Driver Losses (BR)DSS DS(ON) D G 100 V 4.5 A 83 m 10 V The Part is Not ESD Protected These Devices are PbFree, Halogen Free/BFR Free and are RoHS 100 V 131 m 10 V 3.6 A Compliant DualChannel MOSFET Typical Applications Power Tools, Battery Operated Vacuums UAV/Drones, Material Handling Motor Drive, Home Automation MAXIMUM RATINGS (T = 25C, Unless otherwise specified) J Parameter Symbol Q1 Q2 Unit DraintoSource Breakdown Voltage V 100 100 V (BR)DSS GatetoSource Voltage V 20 20 V GS Continuous Steady T = 25C I 4.1 3.3 A C D Drain Current State T = 100C 2.5 2 R (Note 2) C JC Power Dissi- Steady T = 25C P 3.1 3.1 W C D pation R State JC T = 100C 1.2 1.2 (Note 2) C Continuous Steady T = 25C I 2.9 2.4 A A D Drain Current State R JA T = 100C 1.8 1.4 SOIC8 A (Notes 1, 2) CASE 751EB Power Dissi- Steady T = 25C P 1.6 1.6 W A D pation R State JA T = 100C 0.6 0.6 (Notes 1, 2) A MARKING DIAGRAM Pulsed Drain T = 25C, t = 10 s I 20 20 A A p DM Current Operating Junction and Storage T , T 55 to +150 C J stg Temperature Range 83NP10M5 ALYW Source Current (Body Diode) I 3 3 A S Single Pulse DraintoSource E 18 34 mJ AS Avalanche Energy (I = 6 A, 8.2 A, L = 1 mH) L A = Assembly Location Lead Temperature Soldering Reflow for T 260 260 C L L = Wafer Lot Soldering Purposes (1/8 from case for 10 s) Y = Year W = Work Week Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 1. Surfacemounted on FR4 board using 1 in pad size, 1 oz Cu pad. ORDERING INFORMATION 2. The entire application environment impacts the thermal resistance values shown, See detailed ordering and shipping information on page 4 of they are not constants and are only valid for the particular conditions noted. this data sheet. Semiconductor Components Industries, LLC, 2021 1 Publication Order Number: May, 2021 Rev. 1 NTMC083NP10M5L/DNTMC083NP10M5L THERMAL CHARACTERISTICS Symbol Parameter Q1 Q2 Unit R JunctiontoCase Steady State (Note 3) 40 40 C/W JC R JunctiontoAmbient Steady State (Note 3) 78 78 JA 3. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. ELECTRICAL CHARACTERISTICS (Q1, N CHANNEL) (T = 25C unless otherwise noted) J Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 100 V (BR)DSS GS D DraintoSource Breakdown Voltage V / T 60 mV/C (BR)DSS J I = 250 A, ref to 25C D Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1 A DSS J V = 0 V, V = 80 V GS DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS Gate Threshold Voltage V 1.0 1.9 3.0 V V = V , I = 28 A GS(TH) GS DS D Negative Threshold Temperature V / T 8.2 mV/C GS(TH) J I = 22 A, ref to 25C D Coefficient DraintoSource On Resistance R V = 10 V, I = 1.5 A 59.4 83 m DS(on) GS D V = 4.5 V, I = 1.2 A 96.3 118 GS D Forward Transconductance g V = 5 V, I = 4 A 7.1 S FS DS D GateResistance R T = 25C 1.21 G A CHARGES & CAPACITANCES pF Input Capacitance C 222 ISS Output Capacitance C 55.4 V = 0 V, f = 1 MHz, V = 50 V OSS GS DS Reverse Transfer Capacitance C 2.6 RSS nC Total Gate Charge Q 3 G(TOT) Threshold Gate Charge Q 0.6 G(TH) V = 4.5 V, V = 50 V, I = 1.5 A GS DS D GatetoSource Charge Q 0.9 GS GatetoDrain Charge Q 1 GD Total Gate Charge Q V = 10 V, V = 50 V, I = 1.5 A 5 G(TOT) GS DD D SWITCHING CHARACTERISTICS TurnOn Delay Time t 8.4 ns d(ON) Rise Time t 8 r V = 10 V, V = 50 V, I = 1.5 A, GS DS D R = 6 TurnOff Delay Time t G 8.9 d(OFF) Fall Time t 6.2 f TurnOn Delay Time t 5.7 ns d(ON) Rise Time t 2 r V = 4.5 V, V = 50 V, I = 1.5 A, GS DS D R = 6 G TurnOff Delay Time t 11.2 d(OFF) Fall Time t 4.6 f OFF CHARACTERISTICS Forward Diode Voltage V T = 25C 0.8 1.2 V SD J V = 0 V, GS I = 1.5 A S T = 125C 1.3 J www.onsemi.com 2