NTMFD5C466N Power MOSFET 40 V, 8.1 m , 49 A, Dual NChannel Features Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses www.onsemi.com G These Devices are PbFree and are RoHS Compliant MAXIMUM RATINGS (T = 25C unless otherwise noted) J V R MAX I MAX (BR)DSS DS(ON) D Parameter Symbol Value Unit 40 V 8.1 m 10 V 49 A DraintoSource Voltage V 40 V DSS GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 49 A C D Dual NChannel Current R JC T = 100C 35 (Notes 1, 2, 3) C Steady D1 D2 State Power Dissipation T = 25C P 38 W C D R (Notes 1, 2) JC T = 100C 19 C Continuous Drain I A T = 25C 14 A D G1 G2 Current R JA T = 100C 10 (Notes 1, 2, 3) A Steady State Power Dissipation T = 25C P 3.0 W A D S1 S2 R (Notes 1 & 2) JA T = 100C 1.5 A Pulsed Drain Current T = 25C, t = 10 s I 169 A A p DM MARKING Operating Junction and Storage Temperature T , T 55 to C J stg DIAGRAM + 175 D1 D1 Source Current (Body Diode) I 31 A S S1 D1 1 G1 D1 Single Pulse DraintoSource Avalanche E 72 mJ 5C466N AS DFN8 5x6 Energy (T = 25C, I = 3 A) J L(pk) S2 AYWZZ D2 (SO8FL) G2 D2 Lead Temperature for Soldering Purposes T 260 C CASE 506BT L D2 D2 (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the 5C466N = Specific Device Code device. If any of these limits are exceeded, device functionality should not be A = Assembly Location assumed, damage may occur and reliability may be affected. Y = Year W = Work Week THERMAL RESISTANCE MAXIMUM RATINGS ZZ = Lot Traceability Parameter Symbol Value Unit JunctiontoCase Steady State 4 C/W R JC JunctiontoAmbient Steady State (Note 2) R 49 JA ORDERING INFORMATION 1. The entire application environment impacts the thermal resistance values shown, See detailed ordering, marking and shipping information on they are not constants and are only valid for the particular conditions noted. page 5 of this data sheet. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: October, 2018 Rev. 0 NTMFD5C466N/DNTMFD5C466N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 23 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 10 DSS GS J V = 40 V A DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 2.5 3.5 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 6.4 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 15 A 6.75 8.1 m DS(on) GS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 650 ISS Output Capacitance C V = 0 V, f = 1 MHz, V = 25 V 320 pF OSS GS DS Reverse Transfer Capacitance C 14 RSS Total Gate Charge Q 11 G(TOT) Threshold Gate Charge Q 2.3 G(TH) nC GatetoSource Charge Q 3.6 V = 10 V, V = 32 V I = 15 A GS GS DS D GatetoDrain Charge Q 1.8 GD Plateau Voltage V 4.8 V GP SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 9.0 d(ON) Rise Time t 22 r V = 10 V, V = 32 V, GS DS ns I = 15 A, R = 1.0 D G TurnOff Delay Time t 19 d(OFF) Fall Time t 6.0 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.9 1.2 SD J V = 0 V, GS V I = 15 A S T = 125C 0.7 J Reverse Recovery Time t 24 RR Charge Time t 11 ns a V = 0 V, dIS/dt = 100 A/ s, GS I = 15 A S Discharge Time t 13 b Reverse Recovery Charge Q 10 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2