MOSFET - Power, Single N-Channel, PQFN8 5x6 150 V, 11.5 m , 78 A NTMFS011N15MC Features www.onsemi.com Small Footprint (5 x 6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) V R MAX I MAX (BR)DSS DS(ON) D Low Q and Capacitance to Minimize Driver Losses G 11.5 m 10 V 35 A These Devices are PbFree, Halogen Free/BFR Free and are RoHS 150 V 13.2 m 8 V 18 A Compliant Typical Applications NChannel MOSFET Synchronous Rectification ACDC and DCDC Power Supplies S 1 8 D ACDC Adapters (USB PD) SR S D 2 7 Load Switch S 3 6 D MAXIMUM RATINGS (T = 25C, Unless otherwise specified) J G 4 5 D Parameter Symbol Value Unit DraintoSource Breakdown Voltage V 150 V (BR)DSS D GatetoSource Voltage V 20 V D GS D D Steady T = 25C Continuous Drain I 78 A C D State Current R (Note JC 2) G S S Power Dissipation P 147 W S D Pin 1 R (Note 2) JC Top Bottom Continuous Drain Steady T = 25C I 10.7 A A D Current R (Note State JA PQFN8 5x6 1, 2) (Power 56) CASE 483AE Power Dissipation P 2.7 W D R (Note 1, 2) JA Pulsed Drain Cur- T = 25C, t = 250 I 259 A DM MARKING DIAGRAM A p rent s Operating Junction and Storage Tempera- T , T 55 to C J stg ture +150 XXXXXX AYWZZ Source Current (Body Diode) I 133 A S Single Pulse DraintoSource Avalanche E 76.1 mJ AS Energy (I = 39 A, L = 0.1 mH) AV A = Assembly Location Lead Temperature Soldering Reflow for Sol- T 300 C L Y = Year dering Purposes (1/8 from case for 10 s) W = Work Week Stresses exceeding those listed in the Maximum Ratings table may damage the ZZ = Lot Traceability device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 1. Surfacemounted on FR4 board using 1 in pad size, 1 oz Cu pad. ORDERING INFORMATION 2. The entire application environment impacts the thermal resistance values See detailed ordering and shipping information on page 2 of shown, they are not constants and are only valid for the particular conditions this data sheet. noted. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: March, 2020 Rev. 1 NTMFS011N15MC/DNTMFS011N15MC THERMAL CHARACTERISTICS Symbol Parameter Max Unit C/W R JunctiontoCase Steady State (Note 5) 0.85 JC R JunctiontoAmbient Steady State (Note 5) 46 JA ORDERING INFORMATION Device Device Marking Package Shipping (Qty / Packing) NTMFS011N15MC NTMFS011N15MC PQFN8 5x6 (Power 56) 3000 / Tape & Reel (PbFree/Halogen Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS V Drain to Source Breakdown Voltage V = 0 V, I = 250 A 150 V (BR)DSS GS D V / T Drain to Source Breakdown Voltage 85 mV/C (BR)DSS J I = 250 A, ref to 25C D Temperature Coefficient I Zero Gate Voltage Drain Current T = 25C 1 A DSS J V = 0 V, V = 120 V GS DS T = 125C 100 J I Gate to Source Leakage Current V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) V Gate Threshold Voltage V = V , I = 194 A 2.5 3.35 4.5 V GS(TH) GS DS D V / T Negative Threshold Temperature 7.2 mV/C GS(TH) J I = 250 A, ref to 25C D Coefficient R Drain to Source On Resistance V = 10 V, I = 35 A 9.0 11.5 m DS(on) GS D V = 8 V, I = 18 A 9.7 13.2 GS D g Forward Transconductance V = 10 V, I = 18 A 96 116 S FS DS D R GateResistance T = 25C 0.9 1.1 G A CHARGES & CAPACITANCES C Input Capacitance 2478 3592 pF ISS C Output Capacitance 728 1092 V = 0 V, f = 1 MHz, V = 75 V OSS GS DS C Reverse Transfer Capacitance 7.9 15 RSS Q Total Gate Charge V = 8 V, V = 75 V, I = 35 A 30.6 46 nC G(TOT) GS DS D Q Total Gate Charge 30.7 46 G(TOT) Q GatetoSource Charge 12.8 GS V = 10 V, V = 75 V, I = 35 A GS DS D Q Switching Charge 9.4 SW Q GatetoDrain Charge 4.5 GD Q Output Charge V = 0 V, V = 75 V 95 OSS GS DD V Plateau Voltage V = 10 V, V = 75 V, I = 35 A 5.1 V GP GS DS D SWITCHING CHARACTERISTICS (Note 3) ns t Turn On Delay Time 19.8 d(ON) t Rise Time 4.7 r V = 10 V, V = 75 V, I = 35 A, GS DS D R = 6 G t Turn Off Delay Time 25.5 d(OFF) t Fall Time 4.0 f www.onsemi.com 2