MOSFET - Power, Single N-Channel 100 V, 12.2 m , 54 A NTMFS015N10MCL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G V R MAX I MAX (BR)DSS DS(ON) D Primary DCDC MOSFET 12.2 m 10 V Synchronous Rectifier in DCDC and ACDC 100 V 54 A 18.3 m 4.5 V Motor Drive These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant D (5,6) MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit DraintoSource Voltage V 100 V DSS G (4) GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 54 A S (1,2,3) C D Current R JC NCHANNEL MOSFET T = 100C 38 (Notes 1, 3) Steady C State Power Dissipation T = 25C P 79 W C D R (Note 1) JC MARKING Continuous Drain T = 25C I 10.5 A A D DIAGRAM Current R JA D Steady (Notes 1, 2, 3) 1 State S D Power Dissipation T = 25C P 3.0 W A D DFN5 S XXXXXX R (Notes 1, 2) JA CASE 488AA AYWZZ S STYLE 1 Pulsed Drain Current T = 25C, t = 10 s I 423 A G D A p DM D Operating Junction and Storage Temperature T , T 55 to C J stg Range +175 XXXXXX = Specific Device Code A = Assembly Location Single Pulse DraintoSource Avalanche E 54 mJ AS Y = Year Energy (L = 3 mH, I = 6 A) AS W = Work Week Lead Temperature for Soldering Purposes T 260 C L ZZ = Lot Traceability (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. See detailed ordering, marking and shipping information in the package dimensions section on page 3 of this data sheet. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit C/W JunctiontoCase Steady State R 1.9 JC JunctiontoAmbient Steady State (Note 2) R 50 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: April, 2020 Rev. 2 NTMFS015N10MCL/DNTMFS015N10MCL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 100 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 60 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 1.0 DSS GS J V = 100 V A DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 77 A 1 1.5 3 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 5.0 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 14 A 9.7 12.2 DS(on) GS D m V = 4.5 V I = 11 A 13.3 18.3 GS D Forward Transconductance g V =5 V, I = 14 A 51 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 1338 ISS Output Capacitance C 521 V = 0 V, f = 1 MHz, V = 50 V pF OSS GS DS Reverse Transfer Capacitance C 9.0 RSS Gate Resistance R 0.1 0.5 3 G Total Gate Charge Q V = 4.5 V, V = 50 V I = 14 A 9.0 nC G(TOT) GS DS D Total Gate Charge Q V = 10 V, V = 50 V I = 14 A 19 nC G(TOT) GS DS D Threshold Gate Charge Q 2.0 G(TH) GatetoSource Charge Q 3.0 nC GS V = 10 V, V = 50 V I = 14 A GS DS D GatetoDrain Charge Q 3.0 GD Plateau Voltage V 2.7 V GP Output Charge Q V = 0 V, V = 50 V 35 nC OSS GS DS Total Gate Charge Sync Q V = 0 to 10 V, V = 0 V 17 nC SYNC GS DS SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 9.0 d(ON) Rise Time t 10 r V = 10 V, V = 50 V, GS DS ns I = 14 A, R = 6.0 D G TurnOff Delay Time t 25 d(OFF) Fall Time t 5.0 f DRAINSOURCE DIODE CHARACTERISTICS Source to Drain Diode Forward Voltage V V = 0 V, I = 2 A (Note 7) 0.7 1.2 V SD GS S V = 0 V, I = 14 A (Note 7) 0.83 1.3 GS S Reverse Recovery Time t 20 ns rr I = 7 A, di/dt = 300 A/ s F Reverse Recovery Charge Q 33 nC rr Reverse Recovery Time t 14 ns rr I = 7 A, di/dt = 1000 A/ s F Reverse Recovery Charge Q 76 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2