MOSFET - Power, Single N-Channel 80 V, 6.2 m , 77 A NTMFS6H836NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G V R MAX I MAX (BR)DSS DS(ON) D These Devices are PbFree and are RoHS Compliant 6.2 m 10 V 80 V MAXIMUM RATINGS (T = 25C unless otherwise noted) 77 A J 7.8 m 4.5 V Parameter Symbol Value Unit DraintoSource Voltage V 80 V DSS GatetoSource Voltage V 20 V D (5,6) GS Continuous Drain T = 25C I 77 A C D Current R JC T = 100C 55 (Notes 1, 3) C Steady State Power Dissipation T = 25C P 89 W D C G (4) R (Note 1) JC T = 100C 45 C Continuous Drain T = 25C I 16 A A D S (1,2,3) Current R JA T = 100C 11 NCHANNEL MOSFET (Notes 1, 2, 3) A Steady State Power Dissipation T = 25C P 3.7 W A D R (Notes 1, 2) JA T = 100C 1.8 A MARKING DIAGRAM Pulsed Drain Current T = 25C, t = 10 s I 449 A A p DM D Operating Junction and Storage Temperature T , T 55 to C 1 J stg S D Range + 175 DFN5 XXXXXX S Source Current (Body Diode) I 74 A S (SO8FL) AYWZZ S CASE 488AA G D Single Pulse DraintoSource Avalanche E 653 mJ AS STYLE 1 D Energy (I = 4.6 A) L(pk) XXXXXX = 6H836L Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) XXXXXX = (NTMFS6H836NL) A = Assembly Location Stresses exceeding those listed in the Maximum Ratings table may damage the Y = Year device. If any of these limits are exceeded, device functionality should not be W = Work Week assumed, damage may occur and reliability may be affected. ZZ = Lot Traceability THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase Steady State 1.7 C/W R JC ORDERING INFORMATION See detailed ordering, marking and shipping information in the JunctiontoAmbient Steady State (Note 2) R 40.7 JA package dimensions section on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: December, 2019 Rev. 0 NTMFS6H836NL/DNTMFS6H836NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 80 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 46.2 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 10 DSS GS J V = 80 V A DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 95 A 1.2 2.0 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 5.2 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 15 A 5.1 6.2 m DS(on) GS D V = 4.5 V I = 15 A 6.2 7.8 m GS D Forward Transconductance g V = 8 V, I = 40 A 99 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 1950 ISS Output Capacitance C 250 V = 0 V, f = 1 MHz, V = 40 V pF OSS GS DS Reverse Transfer Capacitance C 11 RSS Total Gate Charge Q V = 10 V, V = 40 V I = 40 A 34 G(TOT) GS DS D Threshold Gate Charge Q 3 G(TH) nC GatetoSource Charge Q 6.3 GS GatetoDrain Charge Q 5.5 V = 4.5 V, V = 40 V I = 40 A GD GS DS D Plateau Voltage V 3.0 V GP Total Gate Charge Q 16 nC G(TOT) SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 40 d(ON) Rise Time t 125 r V = 4.5 V, V = 64 V, GS DS ns I = 40 A, R = 2.5 D G TurnOff Delay Time t 26 d(OFF) Fall Time t 8 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.8 1.2 SD J V = 0 V, GS V I = 15 A S T = 125C 0.66 J Reverse Recovery Time t 42 RR Charge Time t 26 ns a V = 0 V, dIS/dt = 100 A/ s, GS I = 40 A S Discharge Time t 16 b Reverse Recovery Charge Q 45 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2