MOSFET Power, Single N-Channel 40 V, 0.72 m , 368 A NTMJS0D8N04CL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G V R MAX I MAX (BR)DSS DS(ON) D LFPAK8 Package, Industry Standard These Devices are PbFree and are RoHS Compliant 0.72 m 10 V 40 V 368 A 1.15 m 4.5 V MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit DraintoSource Voltage V 40 V DSS D (58) GatetoSource Voltage V 20 V GS Continuous Drain Steady I A T = 25C 368 C D Current R State JC T = 100C 260 (Notes 1, 3) C G (4) Power Dissipation T = 25C P 180 W C D R (Note 1) JC T = 100C 90 C S (1,2,3) Continuous Drain Steady T = 25C I 56 A A D NCHANNEL MOSFET Current R State JA T = 100C 40 (Notes 1, 2, 3) A Power Dissipation T = 25C P 4.2 W A D MARKING R (Notes 1, 2) JA DIAGRAM T = 100C 2.1 A DD D D Pulsed Drain Current T = 25C, t = 10 s I 900 A A p DM Operating Junction and Storage Temperature T , T 55 to C J stg 0D8N04 Range +175 CL LFPAK8 ALLYW Source Current (Body Diode) I 150 A S CASE 760AA Single Pulse DraintoSource Avalanche E 1286 mJ AS 1 Energy (I = 32.8 A) L(pk) S SS G Lead Temperature for Soldering Purposes T 260 C L 0D8N04CL = Specific Device Code (1/8 from case for 10 s) A = Assembly Location Stresses exceeding those listed in the Maximum Ratings table may damage the LL = Wafer Lot device. If any of these limits are exceeded, device functionality should not be Y = Year assumed, damage may occur and reliability may be affected. W = Work Week THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit ORDERING INFORMATION JunctiontoCase Steady State R 0.83 C/W JC See detailed ordering, marking and shipping information on page 5 of this data sheet. JunctiontoAmbient Steady State (Note 2) R 35.9 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: November, 2019 Rev. 0 NTMJS0D8N04CL/DNTMJS0D8N04CL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 18 mV/C (BR)DSS Temperature Coefficient T J Zero Gate Voltage Drain Current I T = 25C 10 A DSS J V = 0 V, GS V = 40 V DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 1.2 2.0 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 5.7 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 50 A 0.60 0.72 m DS(on) GS D V = 4.5 V I = 50 A 0.91 1.15 GS D Forward Transconductance g V =15 V, I = 50 A 500 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 9600 pF ISS Output Capacitance C 4690 V = 0 V, f = 1 MHz, V = 25 V OSS GS DS Reverse Transfer Capacitance C 119 RSS Total Gate Charge Q V = 4.5 V, V = 32 V I = 50 A 78 nC G(TOT) GS DS D Total Gate Charge Q V = 10 V, V = 32 V I = 50 A 162 G(TOT) GS DS D Threshold Gate Charge Q 14 G(TH) GatetoSource Charge Q 25 GS V = 10 V, V = 32 V I = 50 A GS DS D GatetoDrain Charge Q 29 GD Plateau Voltage V 2.7 V GP SWITCHING CHARACTERISTICS (Note 5) ns TurnOn Delay Time t 36 d(ON) Rise Time t 50 r V = 4.5 V, V = 32 V, GS DS I = 50 A, R = 2.5 D G TurnOff Delay Time t 81 d(OFF) Fall Time t 37 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.73 1.2 V SD J V = 0 V, GS I = 50 A S T = 125C 0.6 J Reverse Recovery Time t 83 ns RR Charge Time t 53 a V = 0 V, dI /dt = 100 A/ s, GS s I = 50 A S Discharge Time t 30 b Reverse Recovery Charge Q 163 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2