NTMJS1D5N04CL Power MOSFET Single NChannel, 40 V, 1.4 m , 200 A Features Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) www.onsemi.com Low Q and Capacitance to Minimize Driver Losses G LFPAK8 Package, Industry Standard V R MAX I MAX These Devices are PbFree and are RoHS Compliant (BR)DSS DS(ON) D 1.4 m 10 V MAXIMUM RATINGS (T = 25C unless otherwise noted) 40 V 200 A J 2.2 m 4.5 V Parameter Symbol Value Unit DraintoSource Voltage V 40 V DSS GatetoSource Voltage V 20 V D (5) GS Continuous Drain Steady T = 25C I 200 A C D Current R State JC T = 100C 140 (Notes 1, 3) C Power Dissipation T = 25C P 110 W C D G (4) R (Note 1) JC T = 100C 53 C Continuous Drain Steady I A T = 25C 38 A D S (1,2,3) Current R State JA T = 100C 27 NCHANNEL MOSFET (Notes 1, 2, 3) A Power Dissipation T = 25C P 3.8 W A D R (Notes 1 & 2) JA T = 100C 1.9 A MARKING Pulsed Drain Current T = 25C, t = 10 s I 900 A DIAGRAM A p DM Operating Junction and Storage Temperature T , T 55 to C J stg + 175 1D5N04 Source Current (Body Diode) I 120 A S CL AWLYW Single Pulse DraintoSource Avalanche E 493 mJ LFPAK8 AS Energy (I = 15 A) L(pk) CASE 760AA Single Pulse DraintoSource Voltage V 48 V DSM (t = 10 s) p 1D5N04CL = Specific Device Code Lead Temperature for Soldering Purposes T 260 C L A = Assembly Location (1/8 from case for 10 s) WL = Wafer Lot Stresses exceeding those listed in the Maximum Ratings table may damage the Y = Year device. If any of these limits are exceeded, device functionality should not be W = Work Week assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit ORDERING INFORMATION See detailed ordering, marking and shipping information on JunctiontoCase Steady State R 1.4 C/W JC page 5 of this data sheet. JunctiontoAmbient Steady State (Note 2) R 36 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: March, 2019 Rev. 0 NTMJS1D5N04CL/DNTMJS1D5N04CL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 2.0 mV/C (BR)DSS Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 10 A DSS GS J V = 40 V DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 130 A 1.2 2.0 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 5.6 mV/C GS(TH) J DraintoSource On Resistance R V = 4.5 V I = 50 A 1.7 2.2 m DS(on) GS D V = 10 V I = 50 A 1.2 1.4 GS D Forward Transconductance g V =15 V, I = 50 A 256 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C V = 0 V, f = 1 MHz, V = 20 V 4300 pF ISS GS DS Output Capacitance C 1900 OSS Reverse Transfer Capacitance C 72 RSS Total Gate Charge Q V = 4.5 V, V = 20 V I = 50 A 32 nC G(TOT) GS DS D Total Gate Charge Q V = 10 V, V = 20 V I = 50 A 70 G(TOT) GS DS D Threshold Gate Charge Q V = 4.5 V, V = 20 V I = 50 A 7.0 GS DS D G(TH) GatetoSource Charge Q 12 GS GatetoDrain Charge Q 9.0 GD Plateau Voltage V 2.9 V GP SWITCHING CHARACTERISTICS (Note 5) V = 4.5 V, V = 20 V, ns TurnOn Delay Time t 15 d(ON) GS DS I = 50 A, R = 1 D G Rise Time t 140 r TurnOff Delay Time t 31 d(OFF) Fall Time t 9 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, T = 25C 0.81 1.2 V SD GS J I = 50 A S T = 125C 0.68 J Reverse Recovery Time t V = 0 V, dI /dt = 100 A/ s, 61 ns RR GS s I = 50 A S Charge Time t 29 a Discharge Time t 32 b Reverse Recovery Charge Q 80 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2