DATA SHEET www.onsemi.com MOSFET - Power, Single V R MAX I MAX (BR)DSS DS(ON) D 100 V 2.0 m 10 V 236 A N-Channel 100 V, 2.0 m , 236 A D (58) NTMTSC002N10MC Features Small Footprint (8x8 mm) for Compact Design G (1) Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G S (24) New Power 88 Dual Cool Package These Devices are PbFree and are RoHS Compliant NCHANNEL MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit DraintoSource Voltage V 100 V DSS GatetoSource Voltage V 20 V GS TDFNW8 Continuous Drain T = 25C I 236 A C D CASE 507AN Current R JC T = 100C 167 (Notes 1, 3) C Steady State Power Dissipation T = 25C P 255 W C D R (Note 1) JC MARKING DIAGRAM T = 100C 128 C Continuous Drain T = 25C I 29 A A D Current R JA T = 100C 20 (Notes 1, 2, 3) A Steady State Power Dissipation T = 25C P 3.9 W A D R (Notes 1, 2) JA T = 100C 1.9 A 002N10M AWLYW Pulsed Drain Current T = 25C, t = 10 s I 900 A A p DM 002N10M = Specific Device Code Operating Junction and Storage Temperature T , T 55 to C J stg Range +175 A = Assembly Location WL = Wafer Lot Code Source Current (Body Diode) I 213 A S Y = Year Code W = Work Week Code Single Pulse DraintoSource Avalanche E 2223 mJ AS Energy (I = 18.2 A) L(pk) Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) ORDERING INFORMATION See detailed ordering, marking and shipping information in the Stresses exceeding those listed in the Maximum Ratings table may damage the package dimensions section on page 5 of this data sheet. device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit C/W JunctiontoCase, Bottom Steady State R 0.6 JCB JunctiontoCase, Top Steady State R 0.9 JCT JunctiontoAmbient Steady State (Note 2) R 38 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2020 1 Publication Order Number: September, 2021 Rev. 1 NTMTSC002N10MC/DNTMTSC002N10MC ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 100 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 68.7 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 5 DSS GS J V = 100 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 520 A 2.0 4.0 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 9.86 mV/C GS(TH) J DraintoSource On Resistance R V = 6 V I = 46 A 5.3 DS(on) GS D m V = 10 V I = 90 A 1.7 2.0 GS D Forward Transconductance g V =5 V, I = 93 A 180 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 6305 ISS Output Capacitance C 3405 V = 0 V, f = 1 MHz, V = 50 V pF OSS GS DS Reverse Transfer Capacitance C 37 RSS Total Gate Charge Q V = 10 V, V = 50 V I = 93 A 89 G(TOT) GS DS D Threshold Gate Charge Q 17 G(TH) nC GatetoSource Charge Q 28 GS V = 10 V, V = 50 V I = 93 A GS DS D GatetoDrain Charge Q 21 GD Plateau Voltage V 4.8 V GP SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 29 d(ON) Rise Time t 19 r V = 10 V, V = 50 V, GS DS ns I = 93 A, R = 6 D G TurnOff Delay Time t 59 d(OFF) Fall Time t 26 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.84 1.2 SD J V = 0 V, GS V I = 90 A S T = 125C 0.72 J Reverse Recovery Time t 49 RR Charge Time t 24 ns a V = 0 V, dIS/dt = 100 A/ s, GS I = 46 A S Discharge Time t 26 b Reverse Recovery Charge Q 44 nC RR Reverse Recovery Time t 38 RR Charge Time t 21 ns a V = 0 V, dIS/dt = 1000 A/ s, GS I = 46 A S Discharge Time t 18 b Reverse Recovery Charge Q 310 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2