NTMYS7D3N04CL Power MOSFET 40 V, 7.3 m , 52 A, Single NChannel Features Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) www.onsemi.com Low Capacitance to Minimize Driver Losses LFPAK4 Package, Industry Standard V R MAX I MAX (BR)DSS DS(on) D These Devices are PbFree and are RoHS Compliant 7.3 m 10 V 40 V 52 A MAXIMUM RATINGS (T = 25C unless otherwise noted) J 12 m 4.5 V Parameter Symbol Value Unit DraintoSource Voltage V 40 V DSS NChannel GatetoSource Voltage V 20 V GS D (5 8) Continuous Drain Cur- Steady I A T = 25C 52 C D rent R (Notes 1, 2, State JC T = 100C 29 3, 4) C Power Dissipation T = 25C P 38 W C D R (Notes 1, 2, 3) G (4) JC T = 100C 12 C Continuous Drain Cur- Steady T = 25C I 17 A A D S (1, 2, 3) rent R (Notes 1 & State JA T = 100C 12 3, 4) A Power Dissipation T = 25C P 3.8 W A D MARKING R (Notes 1, 3) JA T = 100C 1.9 DIAGRAM A Pulsed Drain Current T = 25C, t = 10 s I 269 A A p DM Operating Junction and Storage Temperature T , T 55 to C J stg 7D3N04 +175 CL Source Current (Body Diode) I 31 A S AWLYW LFPAK4 CASE 760AB Single Pulse DraintoSource Avalanche E 65 mJ AS Energy (I = 2.9 A) L(pk) Lead Temperature for Soldering Purposes T 260 C L 7D3N04CL = Specific Device Code (1/8 from case for 10 s) A = Assembly Location Stresses exceeding those listed in the Maximum Ratings table may damage the WL = Wafer Lot device. If any of these limits are exceeded, device functionality should not be Y = Year assumed, damage may occur and reliability may be affected. W = Work Week THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Parameter Symbol Value Unit JunctiontoCase Steady State (Note 3) R 4.0 C/W JC ORDERING INFORMATION See detailed ordering, marking and shipping information in the JunctiontoAmbient Steady State (Note 3) R 39 JA package dimensions section on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Psi ( ) is used as required per JESD51 12 for packages in which substantially less than 100% of the heat flows to single case surface. 2 3. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 4. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: March, 2019 Rev. 0 NTMYS7D3N04CL/DNTMYS7D3N04CL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown V / 25 mV/C (BR)DSS Voltage Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 10 A DSS GS J V = 40 V DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 30 A 1.2 2.0 V GS(TH) GS DS D DraintoSource On Resistance R V = 10 V, I = 10 A 6.1 7.3 m DS(on) GS D V = 4.5 V, I = 10 A 9.7 12 GS D Forward Transconductance g V = 15 V, I = 10 A 33 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C V = 0 V, f = 1.0 MHz, 860 pF iss GS V = 25 V DS Output Capacitance C 360 oss Reverse Transfer Capacitance C 15 rss Total Gate Charge Q V = 4.5 V, V = 32 V, I = 10 A 7.0 nC G(TOT) GS DS D Threshold Gate Charge Q V = 10 V, V = 32 V, I = 10 A 1.8 nC G(TH) GS DS D GatetoSource Charge Q 3.3 GS GatetoDrain Charge Q 2.5 GD Total Gate Charge Q V = 10 V, V = 32 V, I = 10 A 16 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t V = 10 V, V = 32 V, 8.0 ns GS DS d(on) I = 10 A, R = 1 D G Rise Time t 24 r TurnOff Delay Time t 29 d(off) Fall Time t 6.0 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, V T = 25C 0.84 1.2 SD GS J I = 10 A S T = 125C 0.71 J Reverse Recovery Time t V = 0 V, dl /dt = 100 A/ s, 24 ns RR GS S I = 10 A S Charge Time t 11 a Discharge Time t 12 b Reverse Recovery Charge Q 11 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2