MOSFET - N-Channel Shielded Gate PowerTrench 150 V, 10.9 m , 74.3 A NTP011N15MC Features www.onsemi.com Shielded Gate MOSFET Technology Max R = 10.9 m at V = 10 V, I = 41 A DS(on) GS D 50% Lower Qrr than other MOSFET Suppliers V R MAX I MAX (BR)DSS DS(ON) D Lowers Switching Noise/EMI 100% UIL Tested 150 V 10.9 m 10 V 74.3 A These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant D Typical Applications Synchronous Rectification for ATX / Server / Telecom PSU Motor Drives and Uninterruptible Power Supplies Micro Solar Inverter G MAXIMUM RATINGS (T = 25C unless otherwise noted) J S Parameter Symbol Value Unit NCHANNEL MOSFET DraintoSource Voltage V 150 V DSS GatetoSource Voltage V 20 V GS MARKING DIAGRAM Continuous Drain I 74.3 A D Current R (Note 2) 4 JC Steady 4 T = 25C C State Drain Power Dissipation P 136.4 W D R (Note 2) JC Continuous Drain I 9.8 A D Current R JA (Notes 1, 2) Steady T = 25C TO220 A AYWWZZ State CASE 221A NTP Power Dissipation P 2.4 W D R (Notes 1, 2) 011N15MC JA 1 2 1 3 Pulsed Drain Current T = 25C, t = 100 s I 374 A 3 C p DM Gate Source Operating Junction and Storage Temperature T , T 55 to C J stg Range +175 2 Drain Single Pulse DraintoSource Avalanche E 294 mJ AS Energy (I = 14 A , L = 3 mH) L pk NTP011N15MC = Specific Device Code A = Assembly Location Lead Temperature for Soldering Purposes T 260 C L Y = Year (1/8 from case for 10 s) WW = Work Week Stresses exceeding those listed in the Maximum Ratings table may damage the ZZ = Lot Traceability device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 1. Surfacemounted on FR4 board using a 1 in , 2 oz. Cu pad. ORDERING INFORMATION 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. Device Package Shipping NTP011N15MC TO220 800 / Tube (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: May, 2020 Rev. 1 NTP011N15MC/DNTP011N15MC THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase Steady State (Note 2) R 1.1 C/W JC JunctiontoAmbient Steady State (Note 2) R 62.5 JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 150 V (BR)DSS GS D DraintoSource Breakdown Voltage V / I = 250 A, ref to 25C 83 (BR)DSS D mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J A V = 120 V DS GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS Gate Threshold Voltage V V = V , I = 223 A 2.5 4.5 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T I = 223 A, ref to 25C 8.5 mV/C GS(TH) J D DraintoSource On Resistance R V = 10 V, I = 41 A 8.7 10.9 DS(on) GS D m V = 8 V, I = 20 A 9.3 12.6 GS D Forward Transconductance g V = 10 V, I = 41 A 85 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 2810 ISS Output Capacitance C 840 V = 0 V, f = 1 MHz, V = 75 V pF OSS GS DS Reverse Transfer Capacitance C 14 RSS GateResistance R 0.8 1.6 G Total Gate Charge Q 37 G(TOT) Threshold Gate Charge Q 9.1 G(TH) nC GatetoSource Charge Q 15 V = 10 V, V = 75 V I = 41 A GS GS DS D GatetoDrain Charge Q 6.5 GD Plateau Voltage V 5.4 V GP Output Charge Q V = 75 V, V = 0 V 95 nC OSS DD GS SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time t 19 d(ON) Rise Time t 14 r V = 10 V, V = 75 V, GS DD ns I = 41 A, R = 4.7 D G TurnOff Delay Time t 28 d(OFF) Fall Time t 5.1 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, T = 25C 0.92 1.2 SD GS J V I = 41 A S Reverse Recovery Time t 49 ns RR V = 0 V, V = 75 V GS DD dI /dt = 300 A/ s, I = 41 A S S Reverse Recovery Charge Q 210 nC RR Reverse Recovery Time t 36 ns RR V = 0 V, V = 75 V GS DD dI /dt = 1000 A/ s, I = 41 A S S Reverse Recovery Charge Q 421 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2