MOSFET Power, N-Channel, SUPERFET III 800 V, 360 m , 13 A NTP360N80S3Z Description www.onsemi.com 800 V SUPERFET III MOSFET is ON Semiconductors high performance MOSFET family offering 800 V breakdown voltage. New 800 V SUPERFET III MOSFET which is optimized for V R MAX I MAX (BR)DSS DS(ON) D primary switch of flyback converter, enables lower switching losses and case temperature without sacrificing EMI performance thanks to 800 V 360 m 13 A its optimized design. In addition, internal Zener Diode significantly improves ESD capability. D This new family of 800 V SUPERFET III MOSFET enables to make more efficient, compact, cooler and more robust applications because of its remarkable performance in switching power applications such as Laptop adapter, Audio, Lighting, ATX power and industrial power supplies. G Features Typ. R = 300 m DS(on) S Ultra Low Gate Charge (Typ. Q = 25.3 nC) g POWER MOSFET Low Stored Energy in Output Capacitance (Eoss = 2.72 J 400 V) 100% Avalanche Tested ESD Improved Capability with Zener Diode RoHS Compliant G Applications D S Adapters / Chargers TO220 CASE 340AT LED Lighting AUX Power MARKING DIAGRAM Audio Industrial Power &Z&3&K NTP360 N80S3Z &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot NTP360N80S3Z = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: April, 2020 Rev. 0 NTP360N80S3Z/DNTP360N80S3Z ABSOLUTE MAXIMUM RATINGS (T = 25C, unless otherwise noted) J Symbol Parameter Value Unit V DraintoSource Voltage 800 V DSS V GatetoSource Voltage DC 20 V GS AC (f > 1 Hz) 30 I Drain Current Continuous (T = 25C) 13 A D C Continuous (T = 100C) 8.2 C I Drain Current Pulsed (Note 1) 32.5 A DM E Single Pulsed Avalanche Energy (Note 2) 40 mJ AS I Avalanche Current (Note 2) 2.0 A AS E Repetitive Avalanche Energy (Note 1) 0.96 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 10 P Power Dissipation (T = 25C) 96 W D C Derate Above 25C 0.768 W/C T , T Operating and Storage Temperature Range 55 to +150 C J STG T Lead Temperature Soldering Reflow for Soldering Purposes 260 C L (1/8 from Case for 10 seconds) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulsewidth limited by maximum junction temperature. 2. I = 2.0 A, R = 25 , starting T = 25C. AS G J 3. I 3.25 A, di/dt 200 A/ s, V 400 V, starting T = 25C. SD DD J THERMAL RESISTANCE RATINGS Symbol Parameter Value Unit R JunctiontoCase Steady State 1.3 C/W JC R JunctiontoAmbient Steady State 62.5 JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity NTP360N80S3Z NTP360N80S3Z TO220 Tube N/A N/A 50 Units www.onsemi.com 2