MOSFET - N-Channel Shielded Gate PowerTrench 150 V, 5.0 m , 139 A NTP5D0N15MC Features www.onsemi.com Shielded Gate MOSFET Technology Max R = 5.0 m at V = 10 V, I = 97 A DS(on) GS D 50% Lower Qrr than other MOSFET Suppliers V R MAX I MAX (BR)DSS DS(ON) D Lowers Switching Noise/EMI 100% UIL Tested 150 V 5.0 m 10 V 139 A These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant D Typical Applications Synchronous Rectification for ATX / Server / Telecom PSU Motor Drives and Uninterruptible Power Supplies Micro Solar Inverter G MAXIMUM RATINGS (T = 25C unless otherwise noted) J S Parameter Symbol Value Unit NCHANNEL MOSFET DraintoSource Voltage V 150 V DSS GatetoSource Voltage V 20 V GS MARKING DIAGRAM Continuous Drain I 139 A D Current R 4 JC 4 (Note 2) Steady T = 25C C Drain State Power Dissipation P 214 W D R (Note 2) JC Continuous Drain I 15 A D Current R JA AYWWZZ Steady (Notes 1, 2) T = 25C TO220 A NTP State CASE 221A Power Dissipation P 2.4 W 5D0N15MC D 1 R (Notes 1, 2) JA 2 1 3 3 Pulsed Drain Current T = 25C, t = 100 s I 818 A Gate Source DM A p Operating Junction and Storage Temperature T , T 55 to C J stg 2 Range +175 Drain Single Pulse DraintoSource Avalanche E 1014 mJ AS NTP5D0N15MC = Specific Device Code Energy (I = 26 A , L = 3 mH) L pk A = Assembly Location Y = Year Lead Temperature for Soldering Purposes T 260 C L WW = Work Week (1/8 from case for 10 s) ZZ = Lot Traceability Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 ORDERING INFORMATION 1. Surfacemounted on FR4 board using a 1 in , 2 oz. Cu pad. 2. The entire application environment impacts the thermal resistance values shown, Device Package Shipping they are not constants and are only valid for the particular conditions noted. NTP5D0N15MC TO220 800 / Tube (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: April, 2020 Rev. 1 NTP5D0N15MC/DNTP5D0N15MC THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase Steady State (Note 2) R 0.7 C/W JC JunctiontoAmbient Steady State (Note 2) R 62.5 JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 150 V (BR)DSS GS D DraintoSource Breakdown Voltage V / I = 250 A, ref to 25C 76 (BR)DSS D mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J A V = 120 V DS GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS Gate Threshold Voltage V V = V , I = 532 A 2.5 4.5 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T I = 532 A, ref to 25C 8.5 mV/C GS(TH) J D DraintoSource On Resistance R V = 10 V, I = 97 A 4.2 5 m DS(on) GS D Forward Transconductance g V = 10 V, I = 97 A 146 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 6300 ISS Output Capacitance C 1900 V = 0 V, f = 1 MHz, V = 75 V pF OSS GS DS Reverse Transfer Capacitance C 13 RSS GateResistance R 1.1 2.2 G Total Gate Charge Q 75 G(TOT) Threshold Gate Charge Q 18 G(TH) nC GatetoSource Charge Q 31 GS V = 10 V, V = 75 V I = 97 A GS DS D GatetoDrain Charge Q 10 GD Plateau Voltage V 5.4 V GP Output Charge Q V = 75 V, V = 0 V 227 nC OSS DD GS SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time t 32 d(ON) Rise Time t 14 r V = 10 V, V = 75 V, GS DD ns I = 97 A, R = 4.7 D G TurnOff Delay Time t 45 d(OFF) Fall Time t 9.0 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, T = 25C 0.96 1.2 SD GS J V I = 97 A S Reverse Recovery Time t 92 ns RR V = 0 V, V = 75 V GS DD dI /dt = 100 A/ s, I = 97 A Reverse Recovery Charge Q S S 189 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2