Power MOSFET, N-Channel PowerTrench Power Clip 30 V Symmetric Dual NTTFD2D8N03P1E Features www.onsemi.com Small Footprint (3.3mm x 3.3mm) for Compact Design Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G FET V R MAX I MAX These Devices are PbFree and are RoHS Compliant (BR)DSS DS(ON) D Typical Applications 2.5 m 10 V Q1 30 V 80 A DCDC Converters 3.0 m 4.5 V System Voltage Rails 2.5 m 10 V Q2 30 V 80 A MAXIMUM RATINGS (T = 25C unless otherwise noted) J 3.0 m 4.5 V Parameter Symbol Q1 Q2 Unit DraintoSource Voltage V 30 30 V DSS ELECTRICAL CONNECTION GatetoSource Voltage V +16 +16 V GS 12 12 Continuous Drain T = 25C I 80 80 A D C Current R JC 58 58 Steady T = 85C (Note 3) C State Power Dissipation P 26 26 W D T = 25C A R (Note 3) JC Continuous Drain I 21.1 21.1 A T = 25C D A MARKING Current R JA DIAGRAM T = 85C 15.2 15.2 (Notes 1, 3) Steady A State Power Dissipation P 1.79 1.79 W D T = 25C A R (Notes 1, 3) JA 2ESN PIN1 AYWWZZ Continuous Drain T = 25C I 16.1 16.1 A A D WQFN12 Current R JA 11.6 11.6 Steady T = 85C 3.3X3.3, 0.65P (Notes 2, 3) A State CASE 510CJ Power Dissipation P 1.04 1.04 W D T = 25C A R (Notes 2, 3) JA 2ESN = Specific Device Code A = Assembly Location Pulsed Drain Current T = 25C, t = 10 s I 327 356 A A p DM Y = Year Single Pulse DraintoSource Avalanche E 55.4 58.8 mJ AS WW = Work Week Energy ZZ = Assembly Lot Code Q1: I = 33.3 A , L = 0.1 mH (Note 4) L pk Q2: I = 34.3 A , L = 0.1 mH (Note 4) L pk Operating Junction and Storage Temperature T , T 55 to + 150 C J stg ORDERING INFORMATION Lead Temperature for Soldering T 260 C L Purposes (1/8 from case for 10 s) Device Package Shipping Stresses exceeding those listed in the Maximum Ratings table may damage the NTTFD2D8N03P1E WQFN12 3000 / Tape & device. If any of these limits are exceeded, device functionality should not be (PbFree) Reel assumed, damage may occur and reliability may be affected. 2 1. Surfacemounted on FR4 board using a 1 in pad size, 2 oz. Cu pad. For information on tape and reel specifications, 2. Surfacemounted on FR4 board using minimum pad size, 2 oz. Cu pad. including part orientation and tape sizes, please 3. The entire application environment impacts the thermal resistance values shown, refer to our Tape and Reel Packaging Specifications they are not constants and are only valid for the particular conditions noted. Brochure, BRD8011/D. Actual continuous current will be limited by thermal & electro mechanical application board design. R is determined by the users board design. JC 4. Q1 100% UIS tested at L = 0.1 mH, IAS = 21.1 A. Q2 100% UIS tested at L = 0.1 mH, IAS = 21.1 A. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: January, 2020 Rev. 0 NTTFD2D8N03P1E/DNTTFD2D8N03P1E THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Q1 Max Q2 Max Unit JunctiontoCase Steady State (Notes 1, 3) R 4.8 4.8 C/W JC JunctiontoAmbient Steady State (Notes 1, 3) R 70 70 JA JunctiontoAmbient Steady State (Notes 2, 3) R 120 120 JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition FET Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown V V = 0 V, I = 1 mA Q1 30 (BR)DSS GS D Voltage V V = 0 V, I = 1 mA Q2 30 GS D DraintoSource Breakdown V / I = 1 mA, ref to 25C Q1 17.9 (BR)DSS D Voltage Temperature T J mV/C I = 1 mA, ref to 25C Q2 17.2 Coefficient D Zero Gate Voltage Drain I V = 0 V, T = 25C Q1 1.0 DSS GS J Current V = 24 V A DS Q2 1.0 GatetoSource Leakage I V = 0 V, V = +16 V / 12 V Q1 100 GSS DS GS Current nA V = 0 V, V = +16 V / 12 V Q2 100 DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V Q1 1.0 3.0 V = V , I = 400 A GS(TH) GS DS D V V = V , I = 400 A Q2 1.0 3.0 GS DS D Negative Threshold V /T I = 400 A, ref to 25C Q1 4.3 GS(TH) J D Temperature Coefficient mV/C Q2 4.5 I = 400 A, ref to 25C D DraintoSource On R V = 10 V, I = 18 A Q1 2.0 2.5 DS(on) GS D Resistance V = 4.5 V, I = 16 A 2.6 3.0 GS D m Q2 V = 10 V, I = 18 A 1.8 2.5 GS D V = 4.5 V, I = 16 A 2.4 3.0 GS D Forward Transconductance g V = 5 V, I = 18 A Q1 129 FS DS D S V = 5 V, I = 18 A Q2 141 DS D GateResistance R T = 25C Q1 0.68 G A Q2 0.75 CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C Q1 1500 ISS pF Q2 1521 Output Capacitance C Q1 483 OSS V = 0 V, V = 15 V, f = 1 MHz pF GS DS Q2 498 Reverse Transfer Capacitance C Q1 29 RSS pF Q2 22 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2