NTTFS005N04C Power MOSFET 40 V, 5.6 m , 69 A, Single NChannel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) www.onsemi.com Low Capacitance to Minimize Driver Losses These Devices are PbFree and are RoHS Compliant V R MAX I MAX MAXIMUM RATINGS (T = 25C unless otherwise noted) (BR)DSS DS(on) D J Parameter Symbol Value Unit 40 V 69 A 5.6 m 10 V DraintoSource Voltage V 40 V DSS GatetoSource Voltage V 20 V GS NChannel Continuous Drain T = 25C I 69 A C D D (5 8) Current R JC T = 100C 39 (Notes 1, 2, 3, 4) C Steady State Power Dissipation T = 25C P 50 W C D R (Notes 1, 2, 3) JC T = 100C 16 C G (4) Continuous Drain T = 25C I 17 A D A Current R JA T = 100C 12 S (1, 2, 3) (Notes 1, 3, 4) A Steady State Power Dissipation P W T = 25C 3.1 A D R (Notes 1, 3) JA MARKING DIAGRAM T = 100C 1.6 A 1 Pulsed Drain Current T = 25C, t = 10 s I 297 A 1 A p DM S D 05NC WDFN8 S D Operating Junction and Storage Temperature T , T 55 to C J stg AYWW S D ( 8FL) Range +175 G D CASE 511AB Source Current (Body Diode) I 42 A S Single Pulse DraintoSource Avalanche E 103 mJ AS 05NC = Specific Device Code Energy (I = 4.6 A) L(pk) A = Assembly Location Lead Temperature for Soldering Purposes T 260 C Y = Year L (1/8 from case for 10 s) WW = Work Week = PbFree Package Stresses exceeding those listed in the Maximum Ratings table may damage the (Note: Microdot may be in either location) device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) ORDERING INFORMATION Parameter Symbol Value Unit See detailed ordering, marking and shipping information in the JunctiontoCase Steady State (Note 3) R 3.0 C/W JC package dimensions section on page 5 of this data sheet. JunctiontoAmbient Steady State (Note 3) R 47.7 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Psi ( ) is used as required per JESD51 12 for packages in which substantially less than 100% of the heat flows to single case surface. 2 3. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 4. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: January, 2019 Rev. 0 NTTFS005N04C/DNTTFS005N04C ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D Zero Gate Voltage Drain Current I T = 25C 10 A DSS J V = 0 V, GS V = 40 V DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 40 A 2.5 3.5 V GS(TH) GS DS D DraintoSource On Resistance R V = 10 V, I = 35 A 4.7 5.6 m DS(on) GS D Forward Transconductance g V = 15 V, I = 35 A 53 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 1000 pF iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 530 oss V = 25 V DS Reverse Transfer Capacitance C 22 rss Threshold Gate Charge Q 3.2 nC G(TH) GatetoSource Charge Q 5.7 GS V = 10 V, V = 20 V, I = 35 A GS DS D GatetoDrain Charge Q 2.7 GD Total Gate Charge Q V = 10 V, V = 20 V, I = 35 A 16 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 11 ns d(on) Rise Time t 72 r V = 10 V, V = 20 V, GS DS I = 35 A D TurnOff Delay Time t 24 d(off) Fall Time t 8 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.87 1.2 V SD J V = 0 V, GS I = 35 A S T = 125C 0.75 J Reverse Recovery Time t 36 ns RR Charge Time t 17 a V = 0 V, dl /dt = 100 A/ s, GS S I = 35 A S Discharge Time t 18 b Reverse Recovery Charge Q 16 nC RR 5. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2