NTTFS1D2N02P1E MOSFET - Power, Single N-Channel, Power33 25 V, 1.0 m , 180 A Features Small Footprint for Compact Design www.onsemi.com Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G V R MAX I MAX These Devices are PbFree, Halogen Free/BFR Free and are RoHS (BR)DSS DS(ON) D Compliant 1.0 m 10 V 25 V 180 A 1.2 m 4.5 V Typical Applications DCDC Converters Power Load Switch NMOS Notebook Battery Management D (58) MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit DraintoSource Voltage V 25 V DSS G (4) GatetoSource Voltage V +16/12 V GS Continuous Drain T = 25C I 180 A C D S (1, 2, 3) Current R (Note 3) JC T = 85C 130 Steady C State Power Dissipation T = 25C P 52 W C D MARKING R (Note 3) JC Pin 1 DIAGRAM Continuous Drain T = 25C I 41 A A D Current R 1 JA T = 85C 29 Steady (Notes 1, 3) A 2EJN State AYWWZZ PQFN8 Power Dissipation T = 25C P 2.7 W A D (Power33) R (Notes 1, 3) JA CASE 483AW Continuous Drain T = 25C I 23 A A D Current R JA 2EJN = Specific Device Code T = 85C 16 (Notes 2, 3) Steady A A = Assembly Location State Power Dissipation T = 25C P 0.82 W A D Y = Year R (Notes 2, 3) JA WW = Work Week ZZ = Assembly Lot Code Pulsed Drain Current T = 25C, t = 10 s I 195 A A p DM Single Pulse DraintoSource Avalanche E 202 mJ AS Energy (I = 63.7 A) (Note 4) L(pk) ORDERING INFORMATION Operating Junction and Storage Temperature T , T 55 to C J stg See detailed ordering and shipping information on page 5 of Range +150 this data sheet. Lead Temperature Soldering Reflow for Solder- T 260 C L ing Purposes (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 1. Surfacemounted on FR4 board using a 1 in pad size, 2 oz Cu pad. 2. Surfacemounted on FR4 board using minimum pad size, 2 oz Cu pad. 3. The entire application environment impacts the thermal resistance values shown. They are not constants and are only valid for the particular conditions noted. Actual continuous current will be limited by thermal & electro mechanical application board design. R is determined by the users board CA design. 4. 100% UIS tested at L = 0.1 mH, I = 40 A. AV Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: September, 2019 Rev. 1 NTTFS1D2N02P1E/DNTTFS1D2N02P1E THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit JunctiontoCase Steady State (Note 1) R 2.4 C/W JC JunctiontoAmbient Steady State (Note 1) R 47 JA JunctiontoAmbient Steady State (Note 2) R 152 JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 1 mA 25 V (BR)DSS GS D DraintoSource Breakdown Voltage V / I = 1 mA, ref to 25C 16 (BR)DSS D mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 10 DSS GS J A V = 20 V DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = +16/12 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 934 A 1.2 2.0 V GS(TH) GS DS D Threshold Temperature Coefficient V /T I = 934 A, ref to 25C 4.4 mV/C GS(TH) J D DraintoSource On Resistance R V = 10 V I = 38 A 0.86 1.0 DS(on) GS D m V = 4.5 V I = 35 A 1.05 1.2 GS D Forward Transconductance g V = 5 V, I = 38 A 224 S FS DS D Gate Resistance R T = 25C 0.5 G A CHARGES & CAPACITANCES Input Capacitance C 4040 ISS Output Capacitance C 1100 V = 0 V, f = 1 MHz, V = 13 V pF OSS GS DS Reverse Capacitance C 68 RSS Total Gate Charge Q 24 G(TOT) Threshold Gate Charge Q 5.2 G(TH) V = 4.5 V, V = 13 V I = 38 A GS DS D GatetoDrain Charge Q 3.9 nC GD GatetoSource Charge Q 9.8 GS Total Gate Charge Q V = 10 V, V = 13 V I = 38 A 54 G(TOT) GS DS D SWITCHING CHARACTERISTICS, V = 4.5 V (Note 5) GS TurnOn Delay Time t 24.6 d(ON) Rise Time t 13 r V = 4.5 V, V = 13 V, GS DD ns I = 38 A, R = 6 D G TurnOff Delay Time t 38.5 d(OFF) Fall Time t 9.8 f SWITCHING CHARACTERISTICS, V = 10 V (Note 5) GS TurnOn Delay Time t 14.8 d(ON) Rise Time t 4.2 r V = 10 V, V = 13 V, GS DD ns I = 38 A, R = 6 D G TurnOff Delay Time t 59 d(OFF) Fall Time t 7.9 f SOURCETODRAIN DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.78 1.2 SD J V = 0 V, GS V I = 38 A S T = 125C 0.65 J Reverse Recovery Time t 38 ns RR V = 0 V, dI/dt = 100 A/ s, GS I = 38 A Reverse Recovery Charge Q S 25 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2