MOSFET - Power, N-Channel, Shielded Gate 60 V, 5.2 m , 78 A NTTFS5D1N06HL General Description www.onsemi.com This NChannel MOSFET is produced using ON Semiconductors advanced MOSFET process that incorporates Shielded Gate technology. This process has been optimized to minimize onstate ELECTRICAL CONNECTION resistance and yet maintain superior switching performance with best in class soft body diode. S D Features S D Shielded Gate MOSFET Technology S D Max r = 5.2 m at V = 10 V, I = 16 A DS(on) GS D Max r = 7.1 m at V = 4.5 V, I = 13 A DS(on) GS D G D Lowers Switching Noise/EMI MSL1 Robust Package Design N-Channel MOSFET 100% UIL Tested RoHS Compliant 8 7 65DDDD Applications Primary DCDC MOSFET Pin 1 Synchronous Rectifier in DCDC and ACDC 12 3 4 GSS S Pin 1 Motor Drive Bottom Top WDFN8 (3.3x3.3, 0.65 P) CASE 511DY MARKING DIAGRAM 1N06 AYWW 1N06 = Device Code A = Assembly Location Y = Year Code WW = Work Week Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: Oct0ber, 2019 Rev. 1 NTTFS5D1N06HL/DNTTFS5D1N06HL MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted) A Symbol Parameter Ratings Unit V Drain to Source Voltage 60 V DS V Gate to Source Voltage 20 V GS I Drain Current Continuous T = 25C (Note 5) 78 A D C Continuous T = 100C (Note 5) 49 C Continuous T = 25C (Note 1a) 18 A Pulsed (Note 4) 216 E Single Pulse Avalanche Energy (Note 3) 72 mJ AS P Power Dissipation T = 25C 63 W D C Power Dissipation T = 25C (Note 1a) 3.2 A T , T Operating and Storage Junction Temperature Range 55 to +150 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit R Thermal Resistance, Junction to Case 2 C/W JC R Thermal Resistance, Junction to Ambient (Note 1a) 39 JA PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity 1N06 NTTFS5D1N06HL WDFN8 (3.3x3.3) 7 12 mm 1500 Units ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS BV Drain to Source Breakdown Voltage I = 250 A, V = 0 V 60 V DSS D GS Breakdown Voltage I = 250 A, referenced to 25C 37 mV/C D BV DSS Temperature Coefficient T J I Zero Gate Voltage Drain Current V = 48 V, V = 0 V 10 A DSS DS GS I Gate to Source Leakage Current V = +20 V, V = 0 V 100 nA GSS GS DS ON CHARACTERISTICS V Gate to Source Threshold Voltage V = V , I = 80 A 1.2 1.6 2.0 V GS(th) GS DS D Gate to Source Threshold Voltage I = 80 A, referenced to 25C 5.2 mV/C V D GS(th) Temperature Coefficient T J r Static Drain to Source On V = 10 V, I = 16 A 4.4 5.2 m DS(on) GS D Resistance V = 4.5 V, I = 13 A 5.6 7.1 GS D DYNAMIC CHARACTERISTICS C Input Capacitance V = 30 V, V = 0 V, 1610 pF ISS DS GS f = 1 MHz C Output Capacitance 313 OSS C Reverse Transfer Capacitance 12.2 RSS R Gate Resistance 0.9 G www.onsemi.com 2