MOSFET SiC Power, Single N-Channel, D2PAK-7L 900 V, 20 m , 112 A NVBG020N090SC1 Features Typ. R = 20 m V = 15 V DS(on) GS www.onsemi.com Typ. R = 16 m V = 18 V DS(on) GS Ultra Low Gate Charge (typ. Q = 200 nC) G(tot) V R MAX I MAX (BR)DSS DS(ON) D Low Effective Output Capacitance (typ. C = 295 pF) oss 100% Avalanche Tested 900 V 28 m 15 V 112 A Qualified According to AECQ101 RoHS Compliant Drain (TAB) Typical Applications Automotive On Board Charger Automotive DC/DC Converter for EV/HEV Gate (Pin 1) MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit DraintoSource Voltage V 900 V DSS Driver Source (Pin 2) GatetoSource Voltage V +22/8 V GS Power Source (Pins 3, 4, 5, 6, 7) Recommended Operation Val- T < 175C V +15/5 V C GSop NCHANNEL MOSFET ues of Gate Source Voltage Continuous Drain Steady T = 25C I 112 A C D Current R (Note 2) State JC Power Dissipation P 477 W D R (Note 2) JC Continuous Drain Steady T = 25C I 9.8 A A D State Current R JA (Notes 1, 2) Power Dissipation P 3.7 W D D2PAK7L R (Notes 1, 2) JA CASE 418BJ Pulsed Drain Current (Note 3) T = 25C I 448 A A DM MARKING DIAGRAM Single Pulse Surge T = 25C, t = 10 s, I 854 A A p DSC Drain Current Capa- R = 4.7 G bility (Note 4) AYWWZZ Operating Junction and Storage Temperature T , T 55 to C J stg NVBG Range +175 020N090SC1 Source Current (Body Diode) I 148 A S Single Pulse DraintoSource Avalanche E 264 mJ AS A = Assembly Location Energy (I = 23 A , L = 1 mH) (Note 5) L pk Y = Year WW = Work Week Maximum Lead Temperature for Soldering, 1/8 T 245 C L from Case for 10 Seconds ZZ = Lot Traceability NVBG020N090SC1 = Specific Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION 1. Surface mounted on a FR4 board using1 in2 pad of 2 oz copper. See detailed ordering and shipping information on page 6 of 2. The entire application environment impacts the thermal resistance values this data sheet. shown, they are not constants and are only valid for the particular conditions noted. 3. Repetitive rating, limited by max junction temperature. 4. Peak current might be limited by transconductance. 5. E of 264 mJ is based on starting T = 25C L = 1 mH, I = 23 A, V = AS J AS DD 100 V, V = 15 V. GS Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: April, 2021 Rev. 2 NVBG020N090SC1/DNVBG020N090SC1 Table 1. THERMAL CHARACTERISTICS Parameter Symbol Max Units Thermal Resistance JunctiontoCase (Note 2) R 0.31 C/W JC Thermal Resistance JunctiontoAmbient (Notes 1, 2) R 41 C/W JA Table 2. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 1 mA 900 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T I = 1 mA, refer to 25C 440 mV/C (BR)DSS J D Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V T = 25C 100 A DSS GS J V = 900 V DS T = 175C 250 A J GatetoSource Leakage Current I V = +22/8 V, V = 0 V 1 A GSS GS DS ON CHARACTERISTICS Gate Threshold Voltage V V = V , I = 20 mA 1.8 2.6 4.3 V GS(TH) GS DS D Recommended Gate Voltage V 5 +15 V GOP DraintoSource On Resistance R V = 15 V, I = 60 A, T = 25C 20 28 m DS(on) GS D J V = 18 V, I = 60 A, T = 25C 16 GS D J V = 15 V, I = 60 A, T = 175C 27 GS D J Forward Transconductance g V = 20 V, I = 60 A 49 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C V = 0 V, f = 1 MHz, 4415 pF ISS GS V = 450 V DS Output Capacitance C 295 OSS Reverse Transfer Capacitance C 25 RSS Total Gate Charge Q V = 5/15 V, V = 720 V, 200 nC G(TOT) GS DS I = 60 A D Threshold Gate Charge Q 42 G(TH) GatetoSource Charge Q 76 GS GatetoDrain Charge Q 56 GD f = 1 MHz 1.5 GateResistance R G SWITCHING CHARACTERISTICS TurnOn Delay Time t V = 5/15 V, V = 720 V, 39 ns d(ON) GS DS I = 60 A, R = 2.5 , D G Rise Time t 52 r Inductive Load TurnOff Delay Time t 58 d(OFF) Fall Time t 13 f TurnOn Switching Loss E 1551 J ON TurnOff Switching Loss E 179 OFF Total Switching Loss E 1730 TOT DRAINSOURCE DIODE CHARACTERISTICS Continuous DrainSource Diode Forward I V = 5 V, T = 25C 148 A SD GS J Current Pulsed DrainSource Diode Forward Current I V = 5 V, T = 25C 448 A SDM GS J (Note 3) Forward Diode Voltage V V = 5 V, I = 30 A, T = 25C 3.7 V SD GS SD J www.onsemi.com 2