MOSFET Single N-Channel 150 V, 4.4 m , 187 A NVBLS4D0N15MC Features Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G www.onsemi.com Lowers Switching Noise/EMI AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS V R MAX I MAX (BR)DSS DS(ON) D Compliant 150 V 4.4 m 10 V 187 A Typical Applications Power Tools, Battery Operated Vacuums D UAV/Drones, Material Handling BMS/Storage, Home Automation MAXIMUM RATINGS (T = 25C unless otherwise noted) J G Symbol Parameter Value Unit V DraintoSource Voltage 150 V DSS S V GatetoSource Voltage 20 V GS NCHANNEL MOSFET I Continuous Drain Steady A T = 25C 187 D C Current R (Note 2) State JC T = 100C 132 C P Power Dissipation Steady T = 25C 316 W D C R (Note 2) State JC T = 100C 158 C I Continuous Drain Steady T = 25C 22 A D A Current R State JA Top Bottom T = 100C 15 (Notes 1, 2) A HPSOF8L 11.68x9.80 P Power Dissipation Steady W T = 25C 4 D A MO299A R (Notes 1, 2) State JA T = 100C 2 CASE 100CU A I Pulsed Drain Current T = 25C, t = 10 s 900 A DM A p MARKING DIAGRAM T , T Operating Junction and Storage Temperature 55 to C J stg Range +175 &Z&3&K I Source Current (Body Diode) 263 A S 4D0N E Single Pulse DraintoSource Avalanche 2300 mJ AS 15MC Energy (I = 15.9 A) LPEAK T Lead Temperature Soldering Reflow for 260 C L Soldering Purposes (1/8 from case for 10 s) &Z = Assembly Plant Code &3 = Numeric Date Code Stresses exceeding those listed in the Maximum Ratings table may damage the &K = Lot Code device. If any of these limits are exceeded, device functionality should not be 4D0N15MC = Specific Device Code assumed, damage may occur and reliability may be affected. 2 1. Surfacemounted on FR4 board using 1 in pad size, 2 oz Cu pad. 2. The entire application environment impacts the thermal resistance values shown, ORDERING INFORMATION they are not constants and are only valid for the particular conditions noted. Device Package Shipping THERMAL RESISTANCE RATINGS NVBLS4D0N15MC MO299A 2000 / Tape Symbol Parameter Max Unit (PbFree) & Reel R JunctiontoCase Steady State (Note 2) 0.5 C/W JC For information on tape and reel specifications, including part orientation and tape sizes, please R JunctiontoAmbient Steady State (Note 2) 35.8 JA refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: April, 2020 Rev. 3 NVBLS4D0N15MC/DNVBLS4D0N15MC ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS V DraintoSource Breakdown Voltage V = 0 V, I = 250 A 150 V (BR)DSS GS D V / T DraintoSource Breakdown Voltage I = 250 A, ref to 25C 30.23 mV/C (BR)DSS J D Temperature Coefficient I Zero Gate Voltage Drain Current V = 0 V, T = 25C 1 A DSS GS J V = 120 V DS T = 125C 10 A J I GatetoSource Leakage Current V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS V Gate Threshold Voltage V = V , I = 584 A 2.5 3.7 4.5 V GS(TH) GS DS D V / T Negative Threshold Temperature Coefficient I = 250 A, ref to 25C 10.12 mV/C GS(TH) J D R DraintoSource On Resistance 3.1 4.4 m DS(on) V = 10 V, I = 80 A GS D g Forward Transconductance V = 5 V, I = 80 A 174 S FS DS D R GateResistance T = 25C 1.3 G A CHARGES & CAPACITANCES C Input Capacitance V = 0 V, f = 1 MHz, 7490 pF ISS GS V = 75 V DS C Output Capacitance 2055 OSS C Reverse Transfer Capacitance 27.2 RSS Q Total Gate Charge V = 10 V, V = 75 V, 90.4 nC GS DS G(TOT) I = 80 A D Q Threshold Gate Charge 24.7 G(TH) Q GatetoSource Charge 40.2 GS Q GatetoDrain Charge 12.6 GD V Plateau Voltage 5.7 V GP SWITCHING CHARACTERISTICS, V = 10 V (Note 3) GS t TurnOn Delay Time V = 10 V, V =75 V, 47 ns d(ON) GS DS I = 80 A, R = 6 D G t Rise Time 115 r t TurnOff Delay Time 58 d(OFF) t Fall Time 11 f DRAINSOURCE DIODE CHARACTERISTICS V Forward Diode Voltage V = 0 V, T = 25C 0.86 1.2 V SD GS J I = 80 A S T = 125C 0.75 J ns t Reverse Recovery Time V = 0 V, dI /dt = 100 A/ s, 84 RR GS S I = 80 A S t Charge Time 55 a t Discharge Time 29 b Q Reverse Recovery Charge 180 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Switching characteristics are independent of operating junction temperatures www.onsemi.com 2