NVC6S5A444NLZ Power MOSFET 60 V, 78 m , 4.5 A, NChannel Automotive Power MOSFET designed to minimize gate charge and low on resistance. AECQ101 qualified MOSFET and PPAP capable suitable for automotive applications. www.onsemi.com Features 4.5 V Drive High ESD Protection V R (on) MAX I MAX DSS DS D Low OnResistance 78 m 10 V CPH6 Package is PinCompatible with SOT26 60 V 4.5 A 120 m 4.5 V PbFree, Halogen Free and RoHS Compliance Typical Applications Load Switch ELECTRICAL CONNECTION NChannel Motor Drive 1, 2, 5, 6 Specifications ABSOLUTE MAXIMUM RATINGS (T = 25C) a 1 : Drain Parameter Symbol Value Unit 2 : Drain 3 Drain to Source Voltage V 60 V 3 : Gate DSS 4 : Source Gate to Source Voltage V 20 V GSS 5 : Drain Drain Current (DC) (Note 1) I 4.5 A 6 : Drain 4 D Drain Current (DC) (Note 2) 3.5 A Drain Current (Pulse) I 18 A DP MARKING PW 10 s, duty cycle 1% DIAGRAM Power Dissipation P 1.9 W D 6 Ta = 25C (Note 1) 5 4 Power Dissipation 0.97 W 1 2 Ta = 25C (Note 2) 3 CPH6 Junction Temperature and Tj, Tstg 55 to +175 C CASE 318BD Storage Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction to Ambient (Note 1) R 78.1 C/W JA (Note 2) 153 C/W 2 1. Surface mounted on ceramic substrate (900 mm 0.8 mm). 2 2. Surface mounted on FR4 board using a 92 mm , 1 oz. Cu pad. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: August, 2018 Rev. 0 NVC6S5A444NLZ/D ZW LOT NoNVC6S5A444NLZ ELECTRICAL CHARACTERISTICS (T = 25C) a Parameter Symbol Conditions Min Typ Max Unit 60 V I = 1 mA, V = 0 V Drain to Source Breakdown Voltage (BR)DSS D GS V I V = 60 V, V = 0 V ZeroGate Voltage Drain Current 1.0 A DSS DS GS I V = 16 V, V = 0 V Gate to Source Leakage Current 10 A GSS GS DS 1.2 Gate Threshold Voltage V (th) V = 10 V, I = 1 mA 2.6 V GS DS D g V = 10 V, I = 2 A Forward Transconductance 3.0 S FS DS D Static Drain to Source OnState Resistance R (on) I = 2 A, V = 10 V 60 78 m DS D GS I = 1 A, V = 4.5 V 84 120 m D GS V = 20 V, f = 1 MHz Input Capacitance Ciss DS 505 pF Output Capacitance Coss 57 pF Reverse Transfer Capacitance Crss 37 pF See Figure 1 TurnON Delay Time t (on) 7.3 ns d t Rise Time 9.8 ns r t (off) TurnOFF Delay Time 40 ns d t Fall Time 24 ns f V = 30 V, V = 10 V, I = 4.5 A Total Gate Charge Qg 10 nC DS GS D Gate to Source Charge Qgs 1.6 nC Gate to Drain Miller Charge Qgd 2.1 nC Forward Diode Voltage V I = 4.5 A, V = 0 V 0.86 1.2 V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. V V = 30 V DD IN 10 V 0 V I = 2 A D R = 15 L V IN D V OUT PW = 10 s D.C. 1% G NVC6S5A444NLZ P.G 50 S Figure 1. Switching Time Test Circuit www.onsemi.com 2