NVD5C478N MOSFET Power, Single N-Channel 40 V, 8.4 m , 42 A Features www.onsemi.com Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G AECQ101 Qualified and PPAP Capable V R I (BR)DSS DS(on) D These Devices are PbFree, Halogen Free/BFR Free and are RoHS 40 V 8.4 m 10 V 42 A Compliant MAXIMUM RATINGS (T = 25C unless otherwise noted) J D Parameter Symbol Value Unit DraintoSource Voltage V 40 V DSS GatetoSource Voltage V 20 V GS G Continuous Drain Cur- T = 25C I 43 A C D rent R (Notes 1 & 3) JC T = 100C 30 C Steady State S P W Power Dissipation R T = 25C 30 JC C D NCHANNEL MOSFET (Note 1) T = 100C 15 C Continuous Drain T = 25C I 14 A A D 4 Current R JA T = 100C 10 (Notes 1, 2 & 3) A Steady State 2 1 Power Dissipation R T = 25C P 3.0 W JA A D 3 (Notes 1 & 2) T = 100C 1.5 A DPAK Pulsed Drain Current T = 25C, t = 10 s I 210 A DM A p CASE 369C Operating Junction and Storage Temperature T , T 55 to C STYLE 2 J stg 175 Source Current (Body Diode) I 25 A S MARKING DIAGRAM Single Pulse DraintoSource Avalanche E 97 mJ AS & PIN ASSIGNMENT Energy (T = 25C, I = 3.4 A) J L(pk) 4 Lead Temperature for Soldering Purposes T 260 C Drain L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS 2 Parameter Symbol Value Unit Drain 1 3 Gate Source C/W JunctiontoCase (Drain) (Note 1) R 5.0 JC A = Assembly Location JunctiontoAmbient Steady State (Note 2) R 49.6 JA Y = Year 1. The entire application environment impacts the thermal resistance values shown, WW = Work Week they are not constants and are only valid for the particular conditions noted. 5C478N= Device Code 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. G = PbFree Package 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: June, 2019 Rev. 0 NVD5C478N/D AYWW 5C 478NGNVD5C478N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 22 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I A T = 25C 10 DSS J V = 0 V, GS V = 40 V DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 30 A 2.0 4.0 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 6.5 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V, I = 15 A 7.1 8.4 m DS(on) GS D Forward Transconductance g V = 3 V, I = 15 A 36 S FS DS D CHARGES, CAPACITANCES AND GATE RESISTANCES pF Input Capacitance C 840 iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 430 oss V = 25 V DS Reverse Transfer Capacitance C 24 rss nC Total Gate Charge Q 14 G(TOT) Threshold Gate Charge Q 2.8 G(TH) V = 10 V, V = 32 V, GS DS GatetoSource Charge Q 4.5 GS I = 15 A D GatetoDrain Charge Q 2.8 GD Plateau Voltage V 4.8 V GP SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 9.0 ns d(on) Rise Time t 16 r V = 10 V, V = 32 V, GS DS I = 15 A, R = 2.5 TurnOff Delay Time t D G 15 d(off) Fall Time t 3.0 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.85 1.2 V SD J V = 0 V, GS I = 15 A S T = 125C 0.73 J Reverse Recovery Time t 43 ns RR Charge Time ta 21 V = 0 V, dIs/dt = 100 A/ s, GS I = 15 A S Discharge Time tb 22 Reverse Recovery Charge Q 30 nC RR 4. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2