MOSFET - N-Channel Shielded Gate PowerTrench 150 V, 15 m , 61.3 A NVDS015N15MC Features Shielded Gate MOSFET Technology www.onsemi.com Max R = 15 m at V = 10 V, I = 29 A DS(on) GS D Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses V R MAX I MAX (BR)DSS DS(ON) D Optimized Gate Charge to Minimize Switching Losses 150 V 15 m 10 V 61.3 A AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant D Typical Applications Primary Side for 48 V Isolated Bus SR for MV Secondary Applications G MAXIMUM RATINGS (T = 25C unless otherwise noted) J S Parameter Symbol Value Unit NCHANNEL MOSFET DraintoSource Voltage V 150 V DSS GatetoSource Voltage V 20 V GS MARKING Continuous Drain T = 25C I 61.3 A C D DIAGRAM Current R (Note 2) JC T = 100C 43.4 C Steady 4 State Power Dissipation T = 25C P 107.1 W Drain C D 4 R (Note 2) JC T = 100C 53.6 C AYWW Continuous Drain T = 25C I 10.5 A 2 D 1 A 015 Current R JA 3 T = 100C 7.4 N15MCG (Notes 1, 2) A Steady DPAK State CASE 369C 1 3 Power Dissipation T = 25C P 3.1 W A D R (Notes 1, 2) Gate Source JA 2 T = 100C 1.6 A Drain Pulsed Drain Current T = 25C, t = 10 s I 382 A A p DM 015N15MCG = Specific Device Code A = Assembly Location Operating Junction and Storage Temperature T , T 55 to C J stg Y = Year Range +175 WW = Work Week Source Current (Body Diode) I 89.3 A S Single Pulse DraintoSource Avalanche E 1301 mJ AS Energy (I = 4.4 A) L(pk) ORDERING INFORMATION Lead Temperature for Soldering Purposes T 260 C L Device Package Shipping (1/8 from case for 10 s) NVDS015N15MCT4G DPAK 2500 / Tube Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be (PbFree) assumed, damage may occur and reliability may be affected. 2 For information on tape and reel specifications, 1. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. including part orientation and tape sizes, please 2. The entire application environment impacts the thermal resistance values shown, refer to our Tape and Reel Packaging Specifications they are not constants and are only valid for the particular conditions noted. Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2020 1 Publication Order Number: May, 2020 Rev. 1 NVDS015N15MC/DNVDS015N15MC THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase Steady State (Note 2) R 1.4 C/W JC JunctiontoAmbient Steady State (Notes 1, 2) R 47.9 JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 150 V (BR)DSS GS D DraintoSource Breakdown Voltage V / I = 250 A, ref to 25C 83 (BR)DSS D mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J V = 120 V A DS T = 125C 1.1 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS Gate Threshold Voltage V V = V , I = 162 A 2.5 4.5 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T I = 162 A, ref to 25C 8.2 mV/C GS(TH) J D DraintoSource On Resistance R V = 10 V, I = 29 A 11.8 15 m DS(on) GS D Forward Transconductance g V = 10 V, I = 29 A 58 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 2120 ISS Output Capacitance C 595 OSS V = 0 V, f = 1 MHz, V = 75 V pF GS DS Reverse Transfer Capacitance C 10.5 RSS Total Gate Charge Q 27 G(TOT) Threshold Gate Charge Q 7 G(TH) nC GatetoSource Charge Q 11 V = 10 V, V = 75 V I = 29 A GS GS DS D GatetoDrain Charge Q 4 GD Plateau Voltage V 5.5 V GP SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time t 16 d(ON) Rise Time t 5 r V = 10 V, V = 75 V, GS DD ns I = 29 A, R = 6 D G TurnOff Delay Time t 21 d(OFF) Fall Time t 4 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, I = 29 A T = 25C 0.89 1.2 V SD GS S J Reverse Recovery Time t 49 ns RR V = 0 V, V = 75 V GS DD dI /dt = 300 A/ s, I = 29 A S S Reverse Recovery Charge Q 197 nC RR Reverse Recovery Time t 34 ns RR V = 0 V, V = 75 V GS DD dI /dt = 1000 A/ s, I = 29 A S S Reverse Recovery Charge Q 345 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2