X-On Electronics has gained recognition as a prominent supplier of NVH4L022N120M3S SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVH4L022N120M3S SiC MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

NVH4L022N120M3S ON Semiconductor

NVH4L022N120M3S electronic component of ON Semiconductor
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See Product Specifications
Part No.NVH4L022N120M3S
Manufacturer: ON Semiconductor
Category: SiC MOSFETs
Description: SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, TO247-4L
Datasheet: NVH4L022N120M3S Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 62.0429 ea
Line Total: USD 62.04

Availability - 1500
Ship by Fri. 09 Aug to Wed. 14 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1500
Ship by Fri. 09 Aug to Wed. 14 Aug
MOQ : 1
Multiples : 1
1 : USD 62.0429

2
Ship by Fri. 09 Aug to Wed. 14 Aug
MOQ : 1
Multiples : 1
1 : USD 65.4988
10 : USD 63.348

   
Manufacturer
Product Category
Mounting Style
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Package / Case
LoadingGif
 
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We are delighted to provide the NVH4L022N120M3S from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVH4L022N120M3S and other electronic components in the SiC MOSFETs category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. MOSFET - SiC Power, Single N-Channel, TO247-4L 1200 V, 22 m , 68 A NVH4L022N120M3S Features Typ. R = 22 m V = 18 V www.onsemi.com DS(on) GS Ultra Low Gate Charge (Q = 151 nC) G(tot) High Speed Switching with Low Capacitance (C = 244 pF) oss V R MAX I MAX (BR)DSS DS(ON) D 100% Avalanche Tested 1200 V 30 m 18 V 68 A AECQ101 Qualified and PPAP Capable These Devices are RoHS Compliant D Typical Applications Automotive On Board Charger Automotive DC/DC Converter for EV/HEV Automotive Traction Inverter G S1: Driver Source MAXIMUM RATINGS (T = 25C unless otherwise noted) S2: Power Source J S1 S2 Parameter Symbol Value Unit NCHANNEL MOSFET DraintoSource Voltage V 1200 V DSS GatetoSource Voltage V 10/+22 V GS Recommended Operation Values T < 175C V 3/+18 V C GSop of GatetoSource Voltage Steady T = 25C Continuous Drain I 68 A C D Current (Note 1) State D Power Dissipation P 352 W S2 D S1 (Note 1) G TO2474L Steady T = 100C Continuous Drain I 48 A C D CASE 340CJ Current (Note 1) State Power Dissipation P 176 W D MARKING DIAGRAM (Note 1) Pulsed Drain Current T = 25C I 246 A C DM (Note 2) Operating Junction and Storage Temperature T , T 55 to C J stg Range +175 H4L022 120m3s Source Current (Body Diode) I 72 A S AYWWZZ T = 25C V = 3 V C GS Single Pulse DraintoSource Avalanche E 267 mJ AS Energy (I = 23.1 A, L = 1 mH) (Note 3) L(pk) Maximum Lead Temperature for Soldering T 300 C L H4L022120M3S = Specific Device Code (1/8 from case for 5 s) A = Assembly Location Stresses exceeding those listed in the Maximum Ratings table may damage the Y = Year device. If any of these limits are exceeded, device functionality should not be WW = Work Week assumed, damage may occur and reliability may be affected. ZZ = Lot Traceability 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Repetitive rating, limited by max junction temperature. ORDERING INFORMATION 3. E of 267 mJ is based on starting T = 25C L = 1 mH, I = 23.1 A, AS J AS Device Package Shipping V = 100 V, V = 18 V. DD GS NVH4L022N120M3S TO2474L 30 Units / Tube Semiconductor Components Industries, LLC, 2021 1 Publication Order Number: July, 2021 Rev. 0 NVH4L022N120M3S/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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