MOSFET - SiC Power, Single N-Channel, TO247-4L 1200 V, 40 m , 58 A NVH4L040N120SC1 Features Typ. R = 40 m www.onsemi.com DS(on) Ultra Low Gate Charge (Q = 106 nC) G(tot) High Speed Switching with Low Capacitance (C = 137 pF) oss V R MAX I MAX (BR)DSS DS(ON) D 100% Avalanche Tested 1200 V 56 m 20 V 58 A AECQ101 Qualified and PPAP Capable This Device is PbFree and is RoHS Compliant D Typical Applications Automotive On Board Charger Automotive DC/DC Converter for EV/HEV G MAXIMUM RATINGS (T = 25C unless otherwise noted) J S1: Kelvin Source S2: Power Source Parameter Symbol Value Unit S1 S2 DraintoSource Voltage V 1200 V DSS NCHANNEL MOSFET GatetoSource Voltage V 15/+25 V GS Recommended Operation Values T < 175C V 5/+20 V C GSop of GatetoSource Voltage Steady T = 25C Continuous Drain I 58 A C D Current (Note 2) State Power Dissipation P 319 W D D (Note 2) S2 S1 Continuous Drain Steady T = 100C I 41 A C D G Current (Notes 1, 2) State TO2474L CASE 340CJ Power Dissipation P 160 W D (Notes 1, 2) MARKING DIAGRAM Pulsed Drain Current T = 25C I 232 A A DM (Note 3) Single Pulse Surge T = 25C, t = 10 s, I 416 A C p DSC Drain Current Capability R = 4.7 G AYWWZZ Operating Junction and Storage Temperature T , T 55 to C J stg Range +175 NVH4L040 N120SC1 Source Current (Body Diode) I 32 A S Single Pulse DraintoSource Avalanche E 578 mJ AS Energy (I = 34 A, L = 1 mH) (Note 4) L(pk) Maximum Lead Temperature for Soldering T 300 C L A = Assembly Location (1/8 from case for 5 s) Y = Year Stresses exceeding those listed in the Maximum Ratings table may damage the WW = Work Week device. If any of these limits are exceeded, device functionality should not be ZZ = Lot Traceability assumed, damage may occur and reliability may be affected. NVH4L040N120SC1 = Specific Device Code 1. JA is constant value to follow guide table of LV/HV discrete final datasheet generation. 2. The entire application environment impacts the thermal resistance values shown, ORDERING INFORMATION they are not constants and are only valid for the particular conditions noted. Device Package Shipping 3. Repetitive rating, limited by max junction temperature. 4. EAS of 578 mJ is based on starting T = 25C L = 1 mH, I = 34 A, J AS NVH4L040N120SC1 TO2474L 30 ea / V = 120 V, V = 20 V. DD GS Tube Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: May, 2021 Rev. 2 NVH4L040N120SC1/DNVH4L040N120SC1 THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Max Unit JunctiontoCase Steady State (Note 2) R 0.47 C/W JC JunctiontoAmbient Steady State (Notes 1, 2) R 40 JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 1 mA 1200 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T I = 1 mA, referenced to 25C 0.45 V/C (BR)DSS J D Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, T = 25C 100 A DSS GS J V = 1200 V DS T = 175C 1 mA J GatetoSource Leakage Current I V = +25/15 V, V = 0 V 1 A GSS GS DS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 10 mA 1.8 3.0 4.3 V GS(TH) GS DS D Recommended Gate Voltage V 5 +20 V GOP DraintoSource On Resistance R V = 20 V, I = 35 A, T = 25C 40 56 m DS(on) GS D J V = 20 V, I = 35 A, T = 175C 70 100 GS D J Forward Transconductance g V = 20 V, I = 35 A 20 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C V = 0 V, f = 1 MHz, V = 800 V 1762 pF ISS GS DS Output Capacitance C 137 OSS Reverse Transfer Capacitance C 11 RSS Total Gate Charge Q V = 5/20 V, V = 600 V, 106 nC G(TOT) GS DS I = 47 A D Threshold Gate Charge Q 16 G(TH) GatetoSource Charge Q 34 GS GatetoDrain Charge Q 26 GD GateResistance R f = 1 MHz 2.4 G SWITCHING CHARACTERISTICS, VGS = 10 V TurnOn Delay Time t V = 5/20 V, 17 30 ns d(ON) GS V = 800 V, DS Rise Time t 20 36 r I = 47 A, D R = 4.7 G TurnOff Delay Time t 32 51 d(OFF) inductive load Fall Time t 10 20 f TurnOn Switching Loss E 411 J ON TurnOff Switching Loss E 205 OFF Total Switching Loss E 616 tot DRAINSOURCE DIODE CHARACTERISTICS Continuous DrainSource Diode Forward I V = 5 V, T = 25C 32 A SD GS J Current Pulsed DrainSource Diode Forward I 232 SDM Current (Note 3) Forward Diode Voltage V V = 5 V, I = 17.5 A, T = 3.7 V SD GS SD J 25C www.onsemi.com 2