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OSS AECQ101 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant V R MAX I MAX DSS DS(ON) D MAXIMUM RATINGS (T = 25C unless otherwise noted) C 650 V 40 m 10 V 65 A Parameter Symbol Value Unit DraintoSource Voltage V 650 V DSS D GatetoSource Voltage DC V 30 V GSS GatetoSource Voltage AC (f > 1 Hz) V 30 V GSS Drain Current Continuous (T = 25C) I 65 A C D G Drain Current Continuous (T = 100C) I 45 A C D S1: Driver Source S2: Power Source Drain Current Pulsed (Note 3) I 162.5 A DM S1 S2 Power Dissipation (T = 25C) P 446 W C D POWER MOSFET Power Dissipation Derate Above 25C P 3.57 W/C D MARKING Operating Junction and Storage Temperature T , T 55 to C J STG DIAGRAM Range +150 Single Pulsed Avalanche Energy (Note 4) E 1009 mJ AS Repetitive Avalanche Energy (Note 3) E 4.46 mJ AR Y&Z&3&K MOSFET dv/dt dv/dt 100 V/ns NVH4L040 Peak Diode Recovery dv/dt (Note 5) dv/dt 50 V/ns N65S3F D Max. Lead Temperature for Soldering Purposes T 300 C S2 L S1 (1/8 from case for 5 s) G THERMAL CHARACTERISTICS TO2474LD CASE 340CJ Parameter Symbol Value Unit Thermal Resistance, JunctiontoCase, R 0.28 C/W JC Max. (Notes 1, 2) Y = ON Semiconductor Logo &Z = Assembly Plant Code Thermal Resistance, JunctiontoAmbient, R 40 JA &3 = Data Code (Year & Week) Max. (Notes 1, 2) &K = Lot Stresses exceeding those listed in the Maximum Ratings table may damage the NVH4L040N65S3F = Specific Device Code device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The entire application environment impacts the thermal resistance values shown. They are not constants and are only valid for the particular conditions noted. ORDERING INFORMATION 2. Assembled to an infinite heatsink with perfect heat transfer from the case (assumes 0 K/W thermal interface). Device Package Shipping 3. Repetitive rating: pulsewidth limited by maximum junction temperature. 4. I = 9 A, R = 25 , starting T = 25C. AS G J NVH4L040N65S3F TO2474LD 30 Units / Tube 5. I 32.5 A, di/dt 200 A/ s, V 400 V, starting T = 25C. SD DD J (PbFree) Semiconductor Components Industries, LLC, 2020 1 Publication Order Number: August, 2020 Rev. 0 NVH4L040N65S3F/D