MOSFET Power, NChannel, SUPERFET III, FRFET 650 V, 58 A, 50 m NVHL050N65S3HF www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductors brandnew high voltage superjunction (SJ) MOSFET family that is utilizing charge V R MAX I MAX DSS DS(ON) D balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize 650 V 50 m 58 A conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. D Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET MOSFETs optimized reverse recovery performance of body diode can remove additional component and improve system reliability. G Features 700 V T = 150C S J Typ. R = 41 m DS(on) Ultra Low Gate Charge (Typ. Q = 119 nC) g Low Effective Output Capacitance (Typ. C = 1051 pF) oss(eff.) 100% Avalanche Tested AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS G D Compliant S TO247 long leads Applications CASE 340CX Automotive On Board Charger HEVEV Automotive DC/DC Converter HEVEV MARKING DIAGRAM Y&Z&3&K NVHL050 N65S3HF Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot NVHL050N65S3HF = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: October, 2020 Rev. 2 NVHL050N65S3HF/DNVHL050N65S3HF ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise noted) C Symbol Parameter Value Unit V Drain to Source Voltage 650 V DSS V Gate to Source Voltage DC 30 V GSS AC (f > 1 Hz) 30 I Drain Current Continuous (T = 25C) 58 A D C Continuous (T = 100C) 36 C I Drain Current Pulsed (Note 1) 145 A DM E Single Pulsed Avalanche Energy (Note 2) 830 mJ AS I Avalanche Current (Note 2) 7.5 A AS E Repetitive Avalanche Energy (Note 1) 4.03 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 P Power Dissipation (T = 25C) 403 W D C Derate Above 25C 3.23 W/C T , T Operating and Storage Temperature Range 55 to +150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulsewidth limited by maximum junction temperature. 2. I = 7.5 A, R = 25 , starting T = 25C. AS G J 3. I 29 A, di/dt 200 A/ s, V 400 V, starting T = 25C. SD DD J THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max. 0.31 C/W JC R Thermal Resistance, Junction to Ambient, Max. 40 JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity NVHL050N65S3HF NVHL050N65S3HF TO247 Tube N/A N/A 30 Units www.onsemi.com 2