MOSFET - SiC Power, Single N-Channel 900 V, 60 m , 46 A NVHL060N090SC1 Features Typ. R = 60 m V = 15 V DS(on) GS Typ. R = 43 m V = 18 V DS(on) GS www.onsemi.com Ultra Low Gate Charge (typ. Q = 87 nC) G(tot) Low Effective Output Capacitance (typ. C = 113 pF) oss 100% UIL Tested V R MAX I MAX (BR)DSS DS(on) D Qualified According to AECQ101 900 V 84 m 15 V 46 A These Devices are RoHS Compliant Typical Applications NCHANNEL MOSFET Automotive On Board Charger D Automotive DC/DC converter for EV/HEV MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit DraintoSource Voltage V 900 V DSS G GatetoSource Voltage V +22/8 V GS Recommended Opera- V +15/5 V GSop tion Values of Gateto T < 175C C S Source Voltage Continuous Drain I 46 A D Current R Steady JC T = 25C C State Power Dissipation R P 221 W JC D Continuous Drain I 32 A D Current R Steady JC G T = 100C C State D Power Dissipation R P 110 W S JC D TO2473LD Pulsed Drain Current I 184 A DM CASE 340CX T = 25C A (Note 2) Single Pulse Surge Drain I 320 A DSC T = 25C, t = 10 s, A p MARKING DIAGRAM Current Capability R = 4.7 G (Note 3) Operating Junction and Storage Temperature T , T 55 to C J stg Range +175 Source Current (Body Diode) I 22 A S Y&Z&3&K NVHL060 Single Pulse DraintoSource Avalanche E 162 mJ AS N090SC1 Energy (I = 18 A, L = 1 mH) (Note 4) L(pk) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Y = ON Semiconductor Logo &Z = Assembly Plant Code JunctiontoCase (Note 1) 0.68 C/W R JC &3 = Data Code (Year & Week) &K = Lot JunctiontoAmbient (Note 1) R 40 C/W JA NVHL060N090SC1 = Specific Device Code 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Repetitive rating, limited by max junction temperature. ORDERING INFORMATION 3. Peak current might be limited by transconductance. See detailed ordering and shipping information on page 2 of 4. E of 162 mJ is based on starting T = 25C L = 1 mH, I = 18 A, V = AS J AS DD this data sheet. 100 V, V = 15 V. GS Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: April, 2021 Rev. 2 NVHL060N090SC1/DNVHL060N090SC1 ELECTRICAL CHARACTERISTICS Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V =0V, I = 1 mA 900 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 574 mV/ C (BR)DSS J I = 1 mA, referenced to 25 C D Temperature Coefficient Zero Gate Voltage Drain Current I 100 A V =0V, V = 900 V, T =25 C DSS GS DS J V =0V, V = 900 V, T = 175 C 250 GS DS J GatetoSource Leakage Current I V = +22/8V, V =0V 1 A GSS GS DS ON CHARACTERISTICS Gate Threshold Voltage V V =V , I = 5 mA 1.8 2.7 4.3 V GS(th) GS DS D Recommended Gate Voltage V 5 +15 V GOP DraintoSource On Resistance R V =15V, I = 20 A, T =25 C 60 84 m DS(on) GS D J 43 V =18V, I = 20 A, T =25 C GS D J V =15V, I = 20 A, T = 175 C 76 135 GS D J Forward Transconductance g V =20V, I =20A 17 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE pF Input Capacitance C 1770 ISS Output Capacitance C V = 0 V, f = 1 MHz, V = 450 V 113 OSS GS DS Reverse Transfer Capacitance C 11 RSS nC Total Gate Charge Q 87 G(tot) Threshold Gate Charge Q 17 G(th) V = 5/15 V, V = 720 V, I =10A GS DS D GatetoSource Charge Q 27 GS GatetoDrain Charge Q 26 GD Gate Resistance R f = 1 MHz 3.0 G SWITCHING CHARACTERISTICS ns Turn-On Delay Time t 22 40 d(on) Rise Time t 33 66 r TurnOff Delay Time t 31 74 d(off) V = 5/15 V, V = 720 V, GS DS Fall Time t 11 20 I = 20 A, R = 2.5 , f D G Inductive Load J Turn-On Switching Loss E 464 ON Turn-Off Switching Loss E 23 OFF Total Switching Loss E 487 TOT DRAINSOURCE DIODE CHARACTERISTICS Continuous DraintoSource Diode I 22 A SD V = 5V, T =25 C GS J Forward Current Pulsed DraintoSource Diode For- I 184 A SDM V = 5V, T =25 C GS J ward Current (Note 2) Forward Diode Voltage V V = 5V, I = 10 A, T =25 C 3.9 V SD GS SD J Reverse Recovery Time t 18 ns RR Reverse Recovery Charge Q 84 nC RR Reverse Recovery Energy E 1.0 J REC V = 5/15 V, I =30A, GS SD dI /dt = 1000 A/ s, V = 720 V Peak Reverse Recovery Current I S DS 9.0 A RRM Charge Time t 10 ns a Discharge Time t 8.0 ns b Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2