MOSFET - SiC Power, Single N-Channel 1200 V, 80 m , 31 A NVHL080N120SC1A Features Typ. R = 80 m DS(on) www.onsemi.com Ultra Low Gate Charge (typ. Q = 56 nC) G(tot) Low Effective Output Capacitance (typ. C = 80 pF) oss V R MAX I MAX 100% UIL Tested (BR)DSS DS(on) D Qualified According to AECQ101 1200 V 110 m 20 V 31 A These Devices are RoHS Compliant Typical Applications NCHANNEL MOSFET Automotive On Board Charger D Automotive DC/DC converter for EV/HEV MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit G DraintoSource Voltage V 1200 V DSS GatetoSource Voltage V 15/+25 V GS Recommended Opera- T < 175C V 5/+20 V C GSop S tion Values of Gateto Source Voltage Continuous Drain Steady T = 25C I 31 A C D Current R State JC Power Dissipation R P 178 W JC D Continuous Drain Steady T = 100C I 22 A C D G Current R State JC D S P 89 W Power Dissipation R TO2473LD JC D CASE 340CX Pulsed Drain Current T = 25C I 132 A A DM (Note 2) MARKING DIAGRAM Single Pulse Surge Drain T = 25C, t = 10 s, I 132 A DSC A p Current Capability R = 4.7 G Operating Junction and Storage Temperature T , T 55 to C J stg Range +175 Source Current (Body Diode) I 18 A S Y&Z&3&K NVHL080 Single Pulse DraintoSource Avalanche E 171 mJ AS N120SC1A Energy (I = 18.5 A, L = 1 mH) (Note 3) L(pk) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Y = ON Semiconductor Logo Parameter Symbol Value Unit &Z = Assembly Plant Code &3 = Data Code (Year & Week) JunctiontoCase (Note 1) R 0.84 C/W JC &K = Lot JunctiontoAmbient (Note 1) R 40 C/W JA NVHL080N120SC1A = Specific Device Code 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Repetitive rating, limited by max junction temperature. ORDERING INFORMATION 3. E of 171 mJ is based on starting T = 25C L = 1 mH, I = 18.5 A, AS J AS See detailed ordering and shipping information on page 2 of V = 120 V, V = 18 V. DD GS this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: April, 2020 Rev. 1 NVHL080N120SC1A/DNVHL080N120SC1A ELECTRICAL CHARACTERISTICS Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V =0V, I = 1 mA 1200 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 700 I = 1 mA, referenced to 25 C mV/ C (BR)DSS J D Temperature Coefficient Zero Gate Voltage Drain Current I V =0V, V = 1200 V, T =25 C 100 A DSS GS DS J V =0V, V = 1200 V, T = 175 C 1 mA GS DS J GatetoSource Leakage Current I V = +25/15 V, V =0V 1 A GSS GS DS ON CHARACTERISTICS Gate Threshold Voltage V V =V , I = 5 mA 1.8 2.7 4.3 V GS(th) GS DS D Recommended Gate Voltage V 5 +20 V GOP DraintoSource On Resistance R 80 110 m V =20V, I = 20 A, T =25 C DS(on) GS D J V =20V, I = 20 A, T = 150 C 114 GS D J Forward Transconductance g V =20V, I =20A 13 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C V = 0 V, f = 1 MHz, V = 800 V 1112 pF GS DS ISS Output Capacitance C 80 OSS Reverse Transfer Capacitance C 6.5 RSS Total Gate Charge Q V = 5/20 V, V = 600 V, I =20A 56 nC GS DS D G(tot) GatetoSource Charge Q 11 GS GatetoDrain Charge Q 12 GD Gate Resistance R f = 1 MHz 1.7 G SWITCHING CHARACTERISTICS Turn-On Delay Time t V = 5/20 V, V = 800 V, 13 ns d(on) GS DS I = 20 A, R = 4.7 , D G Rise Time t 20 r Inductive Load TurnOff Delay Time t 22 d(off) Fall Time t 10 f Turn-On Switching Loss E 258 J ON Turn-Off Switching Loss E 52 OFF Total Switching Loss E 311 TOT DRAINSOURCE DIODE CHARACTERISTICS Continuous DraintoSource Diode I V = 5V, T =25 C 18 A SD GS J Forward Current Pulsed DraintoSource Diode For- I V = 5V, T =25 C 132 A SDM GS J ward Current (Note 2) Forward Diode Voltage V 4 V V = 5V, I = 10 A, T =25 C SD GS SD J Reverse Recovery Time t V = 5/20 V, I =20A, 16 ns RR GS SD dI /dt = 1000 A/ s S Reverse Recovery Charge Q 62 nC RR Reverse Recovery Energy E 5 J REC Peak Reverse Recovery Current I 8 A RRM Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2