MOSFET Power, Dual N-Channel, SO-8FL 60 V, 22.6 m , 24 A NVMFD024N06C Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G V R MAX I MAX (BR)DSS DS(ON) D NVMFWD024N06C Wettable Flank Option for Enhanced Optical 60 V 22.6 m 10 V 24 A Inspection AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant Typical Applications Power Tools, Battery Operated Vacuums UAV/Drones, Material Handling BMS/Storage, Home Automation MAXIMUM RATINGS (T = 25C unless otherwise stated) J Symbol Value Units Parameter MARKING DraintoSource Voltage V 60 V DSS DIAGRAM GatetoSource Voltage V 20 V GS 1 Continuous Drain Steady T = 25C I 24 A DFN8 5x6 C D XXXXXX Current RJC (Note State (SO8FL) AYWZZ T = 100C 17 1,3) C CASE 506BT Power Dissipation Steady T = 25C P 28 W C D RJC (Note 1) State T = 100C 14 C XXXXXX = 24DN6C 8 Continuous Drain Steady T = 25C I A A D XXXXXX = (NVMFD024N06C) or Current RJA State XXXXXX = 24DN6W T = 100C 5 (Note 1, 2,3) A XXXXXX = (NVMFWD024N06C) Power Dissipation Steady T = 25C P 3.1 W A = Assembly Location A D RJA (Note 1, 2) State Y = Year 1.5 T = 100C A W = Work Week Pulsed Drain Cur- T = 25C, t = 10 s I 85 A ZZ = Lot Traceability A p DM rent Operating Junction and Storage Temperature T , T 55 C J stg to ORDERING INFORMATION 175 See detailed ordering, marking and shipping information on page 5 of this data sheet. Source Current (Body Diode) I 23 A S Single Pulse DraintoSource Avalanche E 14 mJ AS Energy (I = 5.3 A ) L pk Lead Temperature Soldering Reflow for Sol- T 260 C L dering Purposes (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: December, 2019 Rev. 0 NVMFD024N06C/DNVMFD024N06C THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit JunctiontoCase Steady State (Note 2) R 5.3 JC C/W JunctiontoAmbient Steady State (Note 2) R 46.9 JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V 60 V V = 0 V, I = 250 A (BR)DSS GS D DraintoSource Breakdown Voltage V I = 250 A, ref to 25C 27 mV/C (BR)DSS D Temperature Coefficient / T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 10 A DSS GS J V = 60 V DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 20 A 2.0 4.0 V GS(TH) GS DS D Negative Threshold Temperature V / I = 20 A, ref to 25C 7.8 mV/C GS(TH) D Coefficient T J DraintoSource On Resistance R V = 10 V, I = 3 A 18.8 22.6 m DS(on) GS D Forward Transconductance g V = 5 V, I = 3 A 10 S FS DS D Gate Resistance R T = 25C 0.8 G A CHARGES & CAPACITANCES Input Capacitance C 333 ISS Output Capacitance C 225 V = 0 V, f = 1 MHz, V = 30 V pF OSS GS DS Reverse Capacitance C 5.05 RSS Total Gate Charge Q 5.7 G(TOT) Threshold Gate Charge Q 1.3 G(TH) V = 10 V, V = 48 V, I = 3 A nC GS DS D GatetoSource Charge Q 2.0 GS GatetoDrain Charge Q 0.68 GD SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time t 6.6 d(ON) Rise Time t 1.3 r V = 10 V, V = 48 V, GS DS ns I = 3 A, R = 6 D G TurnOff Delay Time t 10 d(OFF) Fall Time t 3 f DRAINSOURCE DIODE CHARACTERISTICS T = 25C 0.8 1.2 J V = 0 V, GS Forward Voltage V V SD I = 3 A S T = 125C 0.66 J Reverse Recovery Time t 23 RR Charge Time ta 11 ns V = 0 V, d /d = 100 A/ s, GS IS t V = 30 V, I = 3 A DS S Discharge Time tb 12 Reverse Recovery Charge Q 11 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2