MOSFET - Power, Single N-Channel 100 V, 12.2 m , 47.1 A NVMFS015N10MCL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G V R MAX I MAX (BR)DSS DS(ON) D NVMFWS015N10MCL Wettable Flank Option for Enhanced 12.2 m 10 V Optical Inspection 100 V 47.1 A 18.3 m 4.5 V AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant D (5,6) MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit DraintoSource Voltage V 100 V DSS G (4) GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 47.1 A C D S (1,2,3) Steady Current R JC State T = 100C 29.8 NCHANNEL MOSFET (Notes 1, 3) C Power Dissipation T = 25C P 59.5 W C D Steady R (Note 1) JC State T = 100C 23.8 C MARKING DIAGRAM Continuous Drain T = 25C I 10.7 A A D Steady Current R JA D State T = 100C 6.8 (Notes 1, 2, 3) A 1 S D Power Dissipation T = 25C P 3.1 W DFN5 S XXXXXX A D Steady R (Notes 1, 2) JA CASE 488AA AYWZZ S State T = 100C 1.2 A STYLE 1 G D Pulsed Drain Current T = 25C, t = 10 s I 259 A DM D A p Operating Junction and Storage Temperature T , T 55 to C J stg XXXXXX = Specific Device Code Range +175 A = Assembly Location Y = Year Source Current (Body Diode) IS 49.6 A W = Work Week Single Pulse DraintoSource Avalanche E 469 mJ AS ZZ = Lot Traceability Energy (I = 2.6 A) AS Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) ORDERING INFORMATION See detailed ordering, marking and shipping information in the Stresses exceeding those listed in the Maximum Ratings table may damage the package dimensions section on page 5 of this data sheet. device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase Steady State R 2.1 C/W JC JunctiontoAmbient Steady State (Note 2) R 40.8 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: April, 2020 Rev. 2 NVMFS015N10MCL/DNVMFS015N10MCL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 100 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 60 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 1.0 DSS GS J V = 100 V A DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 77 A 1 1.5 3 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 5.0 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 14 A 9.7 12.2 DS(on) GS D m V = 4.5 V I = 11 A 13.3 18.3 GS D Forward Transconductance g V =5 V, I = 14 A 51 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 1338 ISS Output Capacitance C 521 V = 0 V, f = 1 MHz, V = 50 V pF OSS GS DS Reverse Transfer Capacitance C 9.0 RSS Total Gate Charge Q V = 4.5 V, V = 50 V I = 14 A 9.0 nC G(TOT) GS DS D Total Gate Charge Q V = 10 V, V = 50 V I = 14 A 19 nC G(TOT) GS DS D Threshold Gate Charge Q 2.0 G(TH) GatetoSource Charge Q 3.0 nC GS V = 10 V, V = 50 V I = 14 A GS DS D GatetoDrain Charge Q 3.0 GD Plateau Voltage V 2.7 V GP SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 8.4 d(ON) Rise Time t 2.7 r V = 10 V, V = 50 V, GS DS ns I = 14 A, R = 6.0 D G TurnOff Delay Time t 23.8 d(OFF) Fall Time t 4.6 f DRAINSOURCE DIODE CHARACTERISTICS Source to Drain Diode Forward Voltage V V = 0 V, I = 2 A 0.7 1.2 V SD GS S V = 0 V, I = 14 A 0.83 1.3 GS S Reverse Recovery Time t 20 ns rr I = 7 A, di/dt = 300 A/ s F Reverse Recovery Charge Q 33 nC rr Reverse Recovery Time t 14 ns rr I = 7 A, di/dt = 1000 A/ s F Reverse Recovery Charge Q 76 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2