MOSFET - Power, Single N-Channel, SO-8 FL 60 V, 22 m , 25 A NVMFS024N06C Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G V R MAX I MAX NVMFWS024N06C Wettable Flank Option for Enhanced Optical (BR)DSS DS(ON) D Inspection 60 V 22 m 10 V 25 A AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS D (58) Compliant Applications Power Tools, Battery Operated Vacuums UAV/Drones, Material Handling G (4) BMS/Storage, Home Automation MAXIMUM RATINGS (T = 25C unless otherwise stated) J S (1,2,3) Parameter Symbol Value Unit NCHANNEL MOSFET DraintoSource Voltage V 60 V DSS GatetoSource Voltage V 20 V GS MARKING Continuous Drain T = 25C I 25 A C D DIAGRAM Steady Current R JC D State T = 100C 17 C (Notes 1, 3) S D SO8 FLAT LEAD Power Dissipation T = 25C P 28 W C Steady D XXXXXX S R (Note 1) CASE 488AA JC State T = 100C 14 AYWZZ C S STYLE 1 G D Continuous Drain T = 25C I 8 A A D 1 Steady Current R D JA State T = 100C 6 A (Notes 1, 2, 3) XXXXXX = 24N06C T = 25C 3.4 Power Dissipation P W A D Steady XXXXXX = (NVMFS024N06C) or R (Notes 1, 2) JA State T = 100C 1.7 A XXXXXX = 24N06W Pulsed Drain Current I 158 A XXXXXX = (NVMFWS024N06C) T = 25C, t = 10 s A p DM A = Assembly Location Operating Junction and Storage Temperature T , T 55 to C J STG Y = Year Range +175 W = Work Week Source Current (Body Diode) I 23 A S ZZ = Lot Traceability Single Pulse DraintoSource Avalanche E 14 mJ AS Energy (I = 5.3 A ) L pk Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) ORDERING INFORMATION See detailed ordering, marking and shipping information in the Stresses exceeding those listed in the Maximum Ratings table may damage the package dimensions section on page 5 of this data sheet. device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit C/W JunctiontoCase Steady State (Note 1) R 5.3 JC JunctiontoAmbient Steady State (Note 1) R 43.4 JA Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: December, 2019 Rev. 1 NVMFS024N06C/DNVMFS024N06C ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D DraintoSource Breakdown Voltage V / I = 250 A, ref to 25C 27 (BR)DSS D mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 10 DSS GS J V = 60 V A DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 20 A 2.0 4.0 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T I = 17 A, ref to 25C 7.8 mV/C GS(TH) J D DraintoSource On Resistance R V = 10 V I = 3 A 18.3 22 m DS(on) GS D Forward Transconductance g V = 5 V, I = 3 A 10 S FS DS D Gate Resistance R T = 25C 0.8 G A CHARGES AND CAPACITANCES Input Capacitance C 333 ISS Output Capacitance C 225 V = 0 V, f = 1 MHz, V = 30 V pF OSS GS DS Reverse Transfer Capacitance C 5.05 RSS Total Gate Charge Q 5.7 G(TOT) Threshold Gate Charge Q 1.3 G(TH) V = 10 V, V = 48 V I = 3 A nC GS DS D GatetoSource Charge Q 2.0 GS GatetoDrain Charge Q 0.68 GD SWITCHING CHARACTERISTICS, V = 10 V (Note 5) GS TurnOn Delay Time t 6.6 d(ON) Rise Time t 1.3 r V = 10 V, V = 48 V, GS DS ns I = 3 A, R = 6.0 D G TurnOff Delay Time t 10 d(OFF) Fall Time t 3.0 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.8 1.2 SD J V = 0 V, GS V I = 3 A S T = 125C 0.66 J Reverse Recovery Time t 23 RR Charge Time t 11 a ns V = 0 V, dIS/dt = 100 A/ s, GS V = 30 V, I = 3 A DS S Discharge Time t 12 b Reverse Recovery Charge Q 11 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2