NVMFS4C302N Power MOSFET 30 V, 1.15 m , 241 A, Single NChannel Logic Level, SO8FL Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G V R MAX I MAX (BR)DSS DS(on) D NVMFS4C302NWF Wettable Flanks Option for Enhanced Optical 1.15 m 10 V Inspection 30 V 241 A AECQ101 Qualified and PPAP Capable 1.7 m 4.5 V These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant D (5,6) MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit G (4) DraintoSource Voltage V 30 V DSS GatetoSource Voltage V 20 V GS S (1,2,3) Continuous Drain Cur- T = 25C I 241 A C D rent R (Notes 1, 2, NCHANNEL MOSFET JC Steady 3) State MARKING Power Dissipation T = 25C P 115 W C D R (Notes 1, 2) DIAGRAM JC D Continuous Drain Cur- T = 25C I 43 A A D rent R (Notes 1, 2, JA S D 1 Steady 3) S 4C02xx State SO8 FLAT LEAD S AYWZZ Power Dissipation T = 25C P 3.75 W A D CASE 488AA R (Notes 1, 2) G D JA STYLE 1 D Pulsed Drain Current T = 25C, t = 10 s I 900 A A p DM 4C02N = Specific Device Code for Operating Junction and Storage Temperature T , T 55 to C J stg NVMFS4C302N 175 4C02WF= Specific Device Code of NVMFS4C302NWF Source Current (Body Diode) I 153 A S A = Assembly Location Single Pulse DraintoSource Avalanche E 186 mJ AS Y = Year Energy (I = 61 A) L(pk) W = Work Week Lead Temperature for Soldering Purposes T 260 C ZZ = Lot Traceabililty L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. Device Package Shipping THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) NVMFS4C302NT1G SO8 FL 1500 / Parameter Symbol Value Unit (PbFree) Tape & Reel JunctiontoCase Steady State (Note 2) 1.3 C/W R JC NVMFS4C302NWFT1G SO8 FL 1500 / JunctiontoAmbient Steady State (Note 2) R 40 JA (PbFree) Tape & Reel 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. For information on tape and reel specifications, 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. including part orientation and tape sizes, please 3. Maximum current for pulses as long as 1 second is higher but is dependent refer to our Tape and Reel Packaging Specifications on pulse duration and duty cycle. Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: December, 2017 Rev. 0 NVMFS4C302N/DNVMFS4C302N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 24 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 1.0 DSS GS J V = 24 V A DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 1.3 2.2 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 5.8 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 0.95 1.15 DS(on) GS D m V = 4.5 V I = 30 A 1.35 1.7 GS D Forward Transconductance g V = 3 V, I = 30 A 135 S FS DS D Gate Resistance R T = 25 C 1.0 G A CHARGES AND CAPACITANCES Input Capacitance C 5780 ISS Output Capacitance C 2320 OSS V = 0 V, f = 1 MHz, V = 15 V pF GS DS Reverse Transfer Capacitance C 70 RSS Total Gate Charge Q 37 G(TOT) Threshold Gate Charge Q 9.0 G(TH) V = 4.5 V, V = 15 V I = 30 A nC GS DS D GatetoSource Charge Q 16 GS GatetoDrain Charge Q 7.0 GD Total Gate Charge Q V = 10 V, V = 15 V, 82 G(TOT) GS DS nC I = 30 A D SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 13 d(ON) Rise Time t 18 r V = 10 V, V = 15 V, I = 15 A, GS DS D ns R = 3.0 G TurnOff Delay Time t 54 d(OFF) Fall Time t 9.0 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.75 1.1 SD J V = 0 V, GS V I = 10 A S T = 125C 0.6 J Reverse Recovery Time t 56 RR Charge Time t 29 ns a V = 0 V, dI /dt = 100 A/ s, GS S I = 30 A S Discharge Time t 27 b Reverse Recovery Charge Q 69 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2