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NVMFS5C466N MOSFET Power, Single N-Channel 40 V, 8.1 m , 49 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G V R MAX I MAX (BR)DSS DS(ON) D NVMFS5C466NWF Wettable Flank Option for Enhanced Optical 40 V 8.1 m 10 V 49 A Inspection AECQ101 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant D (5,6) MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit DraintoSource Voltage V 40 V DSS G (4) GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 49 A C D S (1,2,3) Current R JC T = 100C 35 (Notes 1, 3) C NCHANNEL MOSFET Steady State Power Dissipation T = 25C P 37 W C D R (Note 1) JC T = 100C 19 C MARKING DIAGRAM Continuous Drain T = 25C I 15 A A D Current R JA D T = 100C 11 (Notes 1, 2, 3) A 1 Steady S D State Power Dissipation T = 25C P 3.5 W A D DFN5 XXXXXX S R (Notes 1 & 2) JA (SO8FL) AYWZZ S T = 100C 1.7 A CASE 488AA G D Pulsed Drain Current T = 25C, t = 10 s I 226 A STYLE 1 A p DM D Operating Junction and Storage Temperature T , T 55 to C J stg XXXXXX = 5C466N + 175 XXXXXX = (NVMFS5C466N) or XXXXXX = 466NWF Source Current (Body Diode) I 31 A S XXXXXX = (NVMFS5C466NWF) Single Pulse DraintoSource Avalanche E 76 mJ AS A = Assembly Location Energy (I = 2.93 A) L(pk) Y = Year W = Work Week Lead Temperature for Soldering Purposes T 260 C L ZZ = Lot Traceability (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering, marking and shipping information in the THERMAL RESISTANCE MAXIMUM RATINGS package dimensions section on page 5 of this data sheet. Parameter Symbol Value Unit C/W JunctiontoCase Steady State R 4.0 JC JunctiontoAmbient Steady State (Note 2) R 43 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: July, 2019 Rev. 0 NVMFS5C466N/D