NVMFS6H800NL Power MOSFET Single NChannel, 80 V, 1.9 m , 224 A Features Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) www.onsemi.com Low Q and Capacitance to Minimize Driver Losses G NVMFS6H800NLWF Wettable Flank Option for Enhanced Optical Inspection V R MAX I MAX AECQ101 Qualified and PPAP Capable (BR)DSS DS(ON) D These Devices are PbFree and are RoHS Compliant 1.9 m 10 V 80 V 224 A 2.4 m 4.5 V MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit DraintoSource Voltage V 80 V DSS D (5,6) GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 224 A D C Current R JC T = 100C 158 (Notes 1, 3) C Steady G (4) State Power Dissipation P W T = 25C 214 C D R (Note 1) JC T = 100C 107 C S (1,2,3) Continuous Drain T = 25C I 30 A A D NCHANNEL MOSFET Current R JA T = 100C 21 (Notes 1, 2, 3) A Steady State Power Dissipation T = 25C P 3.9 W D A MARKING R (Notes 1, 2) JA T = 100C 1.9 DIAGRAM A D Pulsed Drain Current T = 25C, t = 10 s I 900 A A p DM 1 S D Operating Junction and Storage Temperature T , T 55 to C J stg DFN5 XXXXXX S Range +175 (SO8FL) AYWZZ S CASE 488AA Source Current (Body Diode) I 179 A G D S STYLE 1 D Single Pulse DraintoSource Avalanche E 601 mJ AS Energy (I = 16.2 A) XXXXXX = 6H800L L(pk) XXXXXX = (NVMFS6H800NL) or Lead Temperature for Soldering Purposes T 260 C L XXXXXX = 800LWF (1/8 from case for 10 s) XXXXXX = (NVMFS6H800NLWF) Stresses exceeding those listed in the Maximum Ratings table may damage the A = Assembly Location device. If any of these limits are exceeded, device functionality should not be Y = Year assumed, damage may occur and reliability may be affected. W = Work Week ZZ = Lot Traceability THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase Steady State R 0.7 C/W JC ORDERING INFORMATION See detailed ordering, marking and shipping information in the JunctiontoAmbient Steady State (Note 2) 39 R JA package dimensions section on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: April, 2019 Rev. 2 NVMFS6H800NL/DNVMFS6H800NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 80 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 36 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 10 DSS GS J V = 80 V A DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 330 A 1.2 2.0 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 5.1 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 50 A 1.5 1.9 m DS(on) GS D V = 4.5 V I = 50 A 1.9 2.4 m GS D Forward Transconductance g V =8 V, I = 50 A 250 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 6900 ISS Output Capacitance C 800 V = 0 V, f = 1 MHz, V = 40 V pF OSS GS DS Reverse Transfer Capacitance C 22 RSS Total Gate Charge Q V = 10 V, V = 40 V I = 50 A 112 G(TOT) GS DS D Threshold Gate Charge Q 10 G(TH) nC GatetoSource Charge Q 19 GS GatetoDrain Charge Q 17 V = 4.5 V, V = 40 V I = 50 A GD GS DS D Plateau Voltage V 3.0 V GP Total Gate Charge Q 53 nC G(TOT) SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 20 d(ON) Rise Time t 153 r V = 4.5 V, V = 64 V, GS DS ns I = 50 A, R = 2.5 D G TurnOff Delay Time t 118 d(OFF) Fall Time t 163 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.8 1.2 SD J V = 0 V, GS V I = 50 A S T = 125C 0.7 J Reverse Recovery Time t 77 RR Charge Time t 40 ns a V = 0 V, dIS/dt = 100 A/ s, GS I = 50 A S Discharge Time t 38 b Reverse Recovery Charge Q 110 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2