NVMJS1D7N04C MOSFET Power, Single N-Channel 40 V, 1.7 m , 185 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G V R MAX I MAX (BR)DSS DS(ON) D LFPAK8 Package, Industry Standard 40 V 1.7 m 10 V 185 A AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant D (5,8) MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit DraintoSource Voltage V 40 V DSS G (4) GatetoSource Voltage V 20 V GS Continuous Drain Steady T = 25C I 185 A S (1,2,3) C D Current R State JC NCHANNEL MOSFET T = 100C 131 (Notes 1, 3) C Power Dissipation T = 25C P 106 W C D R (Note 1) JC T = 100C 53 MARKING C DIAGRAM Continuous Drain Steady T = 25C I 35 A A D State Current R JA DD D D T = 100C 25 (Notes 1, 2, 3) A Power Dissipation T = 25C P 3.8 W A D 1D7N04 R (Notes 1, 2) JA C T = 100C 1.9 A LFPAK8 AWLYW Pulsed Drain Current T = 25C, t = 10 s I 900 A A p DM CASE 760AA Operating Junction and Storage Temperature T , T 55 to C J stg 1 Range +175 S SS G Source Current (Body Diode) I 102 A S 1D7N04C = Specific Device Code A = Assembly Location Single Pulse DraintoSource Avalanche E 338 mJ AS WL = Wafer Lot Energy (I = 15 A) L(pk) Y = Year Lead Temperature for Soldering Purposes T 260 C W = Work Week L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit C/W JunctiontoCase Steady State R 1.4 JC JunctiontoAmbient Steady State (Note 2) R 36 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: July, 2019 Rev. 1 NVMJS1D7N04C/DNVMJS1D7N04C ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 21 mV/C (BR)DSS Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 10 A DSS GS J V = 40 V DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 130 A 2.5 3.5 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 7.8 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 50 A 1.36 1.7 m DS(on) GS D Forward Transconductance g V =15 V, I = 50 A 130 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C V = 0 V, f = 1 MHz, V = 25 V 3300 pF ISS GS DS Output Capacitance C 1600 OSS Reverse Transfer Capacitance C 45 RSS Total Gate Charge Q V = 10 V, V = 20 V I = 50 A 47 nC G(TOT) GS DS D Threshold Gate Charge Q V = 10 V, V = 20 V I = 50 A 10 G(TH) GS DS D GatetoSource Charge Q 16 GS GatetoDrain Charge Q 7.0 GD Plateau Voltage V 4.7 V GP SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t V = 10 V, V = 20 V, 13 ns GS DS d(ON) I = 50 A, R = 2.5 D G Rise Time t 48 r TurnOff Delay Time t 29 d(OFF) Fall Time t 8.0 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, V T = 25C 0.83 1.2 SD GS J I = 50 A S T = 125C 0.7 J Reverse Recovery Time t V = 0 V, dIS/dt = 100 A/ s, 57 ns RR GS I = 50 A S Charge Time t 30 a Discharge Time t 27 b Reverse Recovery Charge Q 68 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2