MOSFET - Power, Single N-Channel 80 V, 1.1 m , 337 A NVMTS1D2N08H Features www.onsemi.com Small Footprint (8x8 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G V R MAX I MAX (BR)DSS DS(ON) D AECQ101 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant 80 V 1.1 m 10 V 337 A MAXIMUM RATINGS (T = 25C unless otherwise noted) J D (58) Parameter Symbol Value Unit DraintoSource Voltage V 80 V DSS GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 337 A C D G (1) Current R JC T = 100C 238 (Notes 1, 3) C Steady State S (24) Power Dissipation T = 25C P 300 W D C R (Note 1) JC T = 100C 150 NCHANNEL MOSFET C Continuous Drain I A T = 25C 43.5 A D Current R JA T = 100C 30.8 (Notes 1, 2, 3) A Steady State Power Dissipation T = 25C P 5 W A D R (Notes 1, 2) JA T = 100C 2.5 A Pulsed Drain Current T = 25C, t = 10 s I 900 A A p DM Operating Junction and Storage Temperature T , T 55 to C J stg Range + 175 Source Current (Body Diode) I 250 A S DFNW8 CASE 507AP Single Pulse DraintoSource Avalanche E 3170 mJ AS Energy (I = 28.9 A) L(pk) Lead Temperature for Soldering Purposes T 260 C L MARKING DIAGRAM (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1D2N08H AWLYWW THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase Steady State R 0.5 C/W JC A = Assembly Location WL = 2digit Wafer Lot Code JunctiontoAmbient Steady State (Note 2) R 30 JA Y = Year Code 1. The entire application environment impacts the thermal resistance values shown, WW = Work Week Code they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: May, 2020 Rev. 1 NVMTS1D2N08H/DNVMTS1D2N08H ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 80 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 57 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 10 DSS GS J V = 80 V A DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 590 A 2.0 2.9 4.0 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 7.6 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 90 A 0.93 1.1 m DS(on) GS D Forward Transconductance g V =15 V, I = 90 A 400 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 10100 ISS Output Capacitance C 1455 V = 0 V, f = 500 kHz, V = 40 V pF OSS GS DS Reverse Transfer Capacitance C 43 RSS Total Gate Charge Q 147 G(TOT) Threshold Gate Charge Q 27 G(TH) nC GatetoSource Charge Q 41 V = 10 V, V = 64 V I = 90 A GS GS DS D GatetoDrain Charge Q 32 GD Plateau Voltage V 4 V GP SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 29 d(ON) Rise Time t 14 r V = 10 V, V = 64 V, GS DS ns I = 90 A, R = 2.5 D G TurnOff Delay Time t 66 d(OFF) Fall Time t 19 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.8 1.2 SD J V = 0 V, GS V I = 90 A S T = 125C 0.6 J Reverse Recovery Time t 84 ns RR V = 0 V, dIS/dt = 100 A/ s, GS I = 90 A S Reverse Recovery Charge Q 189 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2