NVMYS7D3N04CL MOSFET Power, Single N-Channel 40 V, 7.3 m , 52 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) V R MAX I MAX (BR)DSS DS(on) D Low Capacitance to Minimize Driver Losses 7.3 m 10 V LFPAK4 Package, Industry Standard 40 V 52 A AECQ101 Qualified and PPAP Capable 12 m 4.5 V These Devices are PbFree and are RoHS Compliant MAXIMUM RATINGS (T = 25C unless otherwise noted) NChannel J Parameter Symbol Value Unit D (5 8) DraintoSource Voltage V 40 V DSS GatetoSource Voltage V 20 V GS Continuous Drain Cur- Steady I A T = 25C 52 C D G (4) rent R (Notes 1, 2, State JC T = 100C 29 3, 4) C S (1, 2, 3) Power Dissipation T = 25C P 38 W C D R (Notes 1, 2, 3) JC T = 100C 12 C MARKING Continuous Drain Cur- Steady T = 25C I 17 A A D DIAGRAM rent R (Notes 1 & State JA T = 100C 12 3, 4) A Power Dissipation P W T = 25C 3.8 A D R (Notes 1, 3) JA 7D3N04 T = 100C 1.9 A CL Pulsed Drain Current T = 25C, t = 10 s I 269 A A p DM AWLYW LFPAK4 CASE 760AB Operating Junction and Storage Temperature T , T 55 to C J stg +175 Source Current (Body Diode) I 31 A S 7D3N04CL = Specific Device Code A = Assembly Location Single Pulse DraintoSource Avalanche E 65 mJ AS Energy (I = 2.9 A) WL = Wafer Lot L(pk) Y = Year Lead Temperature for Soldering Purposes T 260 C L W = Work Week (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. Parameter Symbol Value Unit JunctiontoCase Steady State (Note 3) R 4.0 C/W JC JunctiontoAmbient Steady State (Note 3) R 39 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Psi ( ) is used as required per JESD51 12 for packages in which substantially less than 100% of the heat flows to single case surface. 2 3. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 4. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: July, 2019 Rev. 0 NVMYS7D3N04CL/DNVMYS7D3N04CL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown V / 25 mV/C (BR)DSS Voltage Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 10 A DSS GS J V = 40 V DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 30 A 1.2 2.0 V GS(TH) GS DS D DraintoSource On Resistance R V = 10 V, I = 10 A 6.1 7.3 m DS(on) GS D V = 4.5 V, I = 10 A 9.7 12 GS D Forward Transconductance g V = 15 V, I = 10 A 33 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C V = 0 V, f = 1.0 MHz, 860 pF iss GS V = 25 V DS Output Capacitance C 360 oss Reverse Transfer Capacitance C 15 rss Total Gate Charge Q V = 4.5 V, V = 32 V, I = 10 A 7.0 nC G(TOT) GS DS D Threshold Gate Charge Q V = 10 V, V = 32 V, I = 10 A 1.8 nC G(TH) GS DS D GatetoSource Charge Q 3.3 GS GatetoDrain Charge Q 2.5 GD Total Gate Charge Q V = 10 V, V = 32 V, I = 10 A 16 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t V = 10 V, V = 32 V, 8.0 ns GS DS d(on) I = 10 A, R = 1 D G Rise Time t 24 r TurnOff Delay Time t 29 d(off) Fall Time t 6.0 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, V T = 25C 0.84 1.2 SD GS J I = 10 A S T = 125C 0.71 J Reverse Recovery Time t V = 0 V, dl /dt = 100 A/ s, 24 ns RR GS S I = 10 A S Charge Time t 11 a Discharge Time t 12 b Reverse Recovery Charge Q 11 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2