NVTFS010N10MCL MOSFET - Power, Single N-Channel 100 V, 10.6 m , 57.8 A Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses V R MAX I MAX NVTFWS010N10MCLTAG Wettable Flanks Product (BR)DSS DS(on) D AECQ101 Qualified and PPAP Capable 10.6 m 10 V 100 V 57.8 A These Devices are PbFree and are RoHS Compliant 15.9 m 4.5 V MAXIMUM RATINGS (T = 25C unless otherwise noted) J NChannel Parameter Symbol Value Unit D (5 8) DraintoSource Voltage V 100 V DSS GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 57.8 A C D Current R JC G (4) T = 100C 40.8 (Notes 1, 2, 3) C Steady State Power Dissipation P W T = 25C 77.8 C D R (Notes 1, 2) S (1, 2, 3) JC T = 100C 38.9 C Continuous Drain T = 25C I 11.7 A A D Current R 8 7 65DDDD JA T = 100C 8.3 (Notes 1, 2, 3) A Steady State Power Dissipation T = 25C P 3.2 W D A R (Notes 1, 2) JA T = 100C 1.6 A Pin 1 12 3 4 GSS S Pulsed Drain Current T = 25C, t = 10 s I 232 A DM C p Pin 1 Bottom Top Source Current I 64.8 A S WDFN8 Operating Junction and Storage Temperature T , T 55 to C J stg (3.3x3.3, 0.65 P) Range +175 CASE 511DY Single Pulse DraintoSource Avalanche E 526 mJ AS Energy (I = 2.9 A) L(pk) MARKING DIAGRAM Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) N10x Stresses exceeding those listed in the Maximum Ratings table may damage the AYWW device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) N10x = Specific Device Code Parameter Symbol Value Unit x = L or W A = Assembly Location JunctiontoCase Steady State (Note 2) R 1.93 C/W JC Y = Year Code WW = Work Week Code JunctiontoAmbient Steady State (Note 2) R 46.6 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. ORDERING INFORMATION 3. Continuous DC current rating. Maximum current for pulses as long as 1 See detailed ordering, marking and shipping information in the second is higher but is dependent on pulse duration and duty cycle. package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: July, 2019 Rev. 0 NVTFS010N10MCL/DNVTFS010N10MCL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 100 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 64 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J V = 80 V A DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 85 A 1.0 1.5 3.0 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 5.3 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 15 A 9.1 10.6 DS(on) GS D m V = 4.5 V I = 12 A 13.5 15.9 GS D Forward Transconductance g V =5 V, I = 15 A 54 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 1530 2150 ISS Output Capacitance C 625 875 V = 0 V, f = 1 MHz, V = 50 V pF OSS GS DS Reverse Transfer Capacitance C 10 18 RSS Total Gate Charge Q V = 4.5 V, V = 50 V I = 15 A 10 G(TOT) GS DS D nC Total Gate Charge Q V = 10 V, V = 50 V I = 15 A 22 30 G(TOT) GS DS D GatetoSource Charge Q 4.0 GS V = 10 V, V = 50 V I = 15 A nC GS DS D GatetoDrain Charge Q 3.0 GD SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 9.0 d(ON) Rise Time t 3.0 r V = 10 V, V = 50 V, GS DS ns I = 15 A, R = 6 D G TurnOff Delay Time t 28 d(OFF) Fall Time t 5.0 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, I = 15 A 0.8 1.3 V SD GS S Reverse Recovery Time t 22 36 ns RR I = 8 A, di/dt = 300 A/ s F Reverse Recovery Charge Q 35 56 nC RR Reverse Recovery Time t 17 30 ns RR I = 8 A, di/dt = 1000 A/ s F Reverse Recovery Charge Q 79 126 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2